Self-assembled InAs-GaAs quantum-dot intersubband detectors

IEEE Journal of Quantum Electronics

Volumn 35, Issue 6, 1999, Pages 936-943

  Phillips, J ^a   Bhattacharya, Pallab ^a   Kennerly, S W ^b   Beekman, D W ^b   Dutta, M ^c  

^a University of Michigan   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; INFRARED RADIATION; LIGHT ABSORPTION; PHOTOCONDUCTING DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

PHOTOCONDUCTIVE QUANTUM DOT INTERSUBBAND DETECTORS;

INFRARED DETECTORS;

EID: 0032626023     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.766837     Document Type: Article

References (50)

1. J. M. Arias, M. Zandian, J. G. Pasko, J. Bajaj, L. J. Kozlowski, W. E. Tennant, and R. E. DeWames, "MBE HgCdTe IRFPA flexible manufacturing," Proc. SPIE, vol. 2274. pp. 2-16, 1994.
2. G. Destefanis, P. Audebert, E. Mottin, and P. Rambaud, "High performance LWIR 256 × 256 HgCdTe focal plane array operating at 88 k," Proc. SPIE, vol. 3061, pp. 111-116, 1997.
3. P. Tribolet, J. P. Chatard, P. Costa, and A. Manissadjian, "Progress in HgCdTe homojunction infrared detectors," J. Cryst. Growth, vol. 184-185, pp. 1262-1271, 1998.
4. x/InSb infrared photodetectors grown by metalorganic chemical vapor deposition," J. Cryst. Growth, vol. 107, pp. 836-839, 1991.
5. C. H. Grein and H. Ehrenreich, "Improvement of infrared detector performance in carrier depleted strained layer type II superlattices," J. Appl. Phys., vol. 82, pp. 6365-6367, 1997.
6. xSb/InAs superlattice IR detector materials," Appl. Surface Science, vol. 123/124, pp. 395-399, 1998.
7. L. Esaki and H. Sakaki, IBM Tech. Disc. Bull., vol. 20, p. 2456, 1977.
8. L. West and S. Eglash, "First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum well," Appl. Phys. Lett., vol. 46, pp. 1156-1158, 1985.
9. B. Levine, K. Choi, C. Bethea, J. Walker, and R. Malik, "New 10 ftm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices," Appl. Phys. Lett., vol. 50, pp. 1092-1094, 1987.
10. G. Hasnain, B. F. Levine, D. L. Sivco, and A. Y. Cho, "Mid-infrared detectors in the 3-5 μm band using bound to continuum state absorption in InGaAs/InAlAs multiquantum well structures," Appl. Phys. Lett., vol. 56, pp. 770-772, 1990.
11. B. F. Levine, C. G. Bethea, G. Hasnain, V. O. Shen, E. Pelve, R. R. Abbott, and S. J. Hsieh, "High sensitivity low dark current 10 μm GaAs quantum well infrared photo detectors, Appl. Phys. Lett., vol. 56, pp. 851-853, 1990.
12. S. D. Gunapala and K. M. S. V. Bandara, "Recent developments in quantum-well infrared photodetectors," Thin Films, vol. 21, pp. 113-237, 1995.
13. 1-xAs quantum-well infrared photodetectors," J. Appl. Phys., vol. 76, pp. 6001-6008, 1994.
14. S. D. Gunapala, K. M. S. V. Bandara, B. F. Levine, G. Sarusi, J. S. Park, T. L. Pike, and J. K. Liu, "High performance InGaAs/GaAs quantum well infrared photo detectors," Appl. Phys. Lett., vol. 64, pp. 3431-3433, 1994.
15. P. Bois, E. Costard, J. Y. Duboz, and J. Nagle, "Technology of multiple quantum well infrared detectors," Proc. SPIE, vol. 3061, pp. 764-771, 1997.
16. S. S. Li, "Recent progress in quantum well infrared photodetectors and focal plane arrays for IR imaging applications," Mater. Chem. Phys., vol. 50, pp. 188-194, 1997.
17. C. J. Chen, K. K. Choi, W. H. Chang, and D. C. Tsui, "Corrugated quantum well infrared photodetectors with polyimide planarization for detector array applications," IEEE Trans. Electron Devices, vol. 45, pp. 1431-1437, 1998.
18. 1-xAs quantum well infrared photodetector focal plane array camera," Proc. SPIE, vol. 3061, pp. 722-727, 1997.
19. J. Baars, "Materials for high performance infrared detectors: Status and trends," Opt. Mater., vol. 6, pp. 41-54, 1996.
20. A. Rogalski, "Comparison of the performance of quantum well and conventional bulk infrared photodetectors," Infrared Phys. Technol., vol. 38, pp. 295-310, 1997.
21. G. Hasnain, B. F. Levine, C. G. Bethea, R. A. Logan, J. Walker, and R. J. Malik, "GaAs/AlGaAs multiquantum well infrared detector arrays using etched gratings," Appl. Phys. Lett., vol. 54, pp. 2515-2517, 1989.
22. G. Sarusi, B. F. Levine, S. J. Pearton, K. M. S. V. Bandara, and R. E. Leibenguth, "Optimization of two dimensional gratings for very long wavelength quantum well infrared photodetectors," J. Appl. Phys., vol. 76, pp. 4989-4994, 1994.
23. _, "Improved performance of quantum well infrared photodetectors using random scattering optical coupling," Appl. Phys. Lett., vol. 64, pp. 960-962, 1994.
24. H. Benisty, C. M. Sotomayor-Torres, and C. Weisbuch, "Intrinsic mechanism for the poor luminescence properties of quantum-box systems," Phys. Rev. B, vol. 44, pp. 10945-10948, 1991.
25. I. Vurgaftman, Y. Lam, and J. Singh, "Carrier thermalization in sub-three-dimensional electronic systems: Fundamental limits on modulation bandwidth in semiconductor lasers," Phys. Rev. B, vol. 50, pp. 14309-14326, 1994.
26. L. Goldstein, F. Glas, J. Y. Marzin, M. N. Charasse, and G. LeRoux, "Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices." Appl. Phys. Lett., vol. 47, pp. 1099-1101, 1984.
27. 1-xAs on GaAs during the pseudomorphic growth regime," Appl. Phys. Lett., vol. 53, pp. 684-686, 1988.
28. S. Guha, A. Madhukar, and K. C. Rajkumar, "Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxial growth of highly strained InGaAs on GaAs (100)," Appl. Phys. Lett., vol. 57, pp. 2110-2112, 1990.
29. G. J. Whaley and P. I. Cohen, "Relaxation of strained InGaAs during molecular beam epitaxy," Appl. Phys. Lett., vol. 57, pp. 144-146, 1990.
30. D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, and P. M. Petroff, "Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces," Appl. Phys. Lett., vol. 63, pp. 3202-3204, 1993.
31. M. Grundmann, J. Christen, N. N. Ledentsov, J. Bohrer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Richter, U. Gosele, J. Heydenreich, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, and Zh. I. Alferov, "Ultranarrow luminescence lines from single quantum dots," Phys. Rev. Lett., vol. 74, pp. 4043-4046, 1995.
32. D. Bimberg, M. Grundmann, and N. N. Ledentsov, "Growth, spectroscopy and laser application of self-ordered III-V quantum dots," Mater. Res. Soc. Bull., vol. 23, p. 31, 1998.
33. 0.6As-GaAs self-organized quantum-dot lasers," IEEE Photon. Technol. Lett., vol. 9, pp. 1301-1303, 1997.
34. 3 db >40 GHz) 0.98-μm multiquantum-well tunneling injection lasers determined from electrical impedance measurements," IEEE Photon. Technol. Lett., vol. 9, pp. 578-580, 1997.
35. 0.65As-GaAs multi quantum-well lasers determined from high-frequency electrical impedance measurements," IEEE Photon. Technol. Lett., vol. 8, pp. 1294-1296, 1996.
36. H. Jiang and J. Singh, "Self-assembled semiconductor structures: Electronic and optoelectronic properties," IEEE J. Quantum Electron, vol. 34, pp. 1188-1196, 1998.
37. H. Drexler, D. Leonard, W. Hansen, J. P. Kotthaus, and P. M. Petroff, "Spectroscopy of quantum levels in charge-tunable InGaAs quantum dots," Phys. Rev. Lett., vol. 73, pp. 2252-2255, 1994.
38. 0.74As/GaAs quantum dot superlattice," J. Cryst. Growth, vol. 175-176, pp. 760-764, 1997.
39. J. Phillips, K. Kamath, X. Zhou, N. Chervela, and P. Bhattacharya, "Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dots," Appl. Phys. Lett., vol. 71, pp. 2079-2081, 1997.
40. K. W. Berryman, S. A. Lyon, and M. Segev, "Mid-infrared photoconductivity in InAs quantum dots," Appl. Phys. Lett., vol. 70, pp. 1861-2255, 1997.
41. D. Pan, E. Towe, and S. Kennedy, "Strong normal-incidence infrared absorption and photo-current spectra from highly uniform (In,Ga)As/GaAs quantum dot structures," Electron. Lett., vol. 34, pp. 1019-1020, 1998.
42. J. Phillips, K. Kamath, and P. Bhattacharya, "Far-infrared photoconductivity in self-organized InAs quantum dots," Appl. Phys. Lett., vol. 72, p. 2020, 1998.
43. S. Kim, H. Mohseni, M. Erdtmann, E. Michel, C. Jelen, and M. Razeghi, "Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photo conductive detector," Appl. Phys. Lett., vol. 73, pp. 963-965, 1998.
44. S. Sauvage, P. Boucaud, F. H. Julien, J. M. Gerard, and J. Y. Marzin, "Infrared spectroscopy of intraband transitions in self-organized InAs/GaAs quantum dots," J. Appl. Phys., vol. 82, pp. 3396-3401, 1997.
45. H. Jiang and J. Singh, "Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study," Phys. Rev. B, vol. 56, pp. 4696-4701, 1997.
46. V. Ryzhii, "The theory of quantum-dot infrared phototransistors," Semicond. Sci. Technol., vol. 11, pp. 759-765, 1996.
47. S. V. Bandara, S. D. Gunapala, J. K. Liu, E. M. Luong, J. M. Mumolo, W. Hong, D. K. Sengupta, and M. J. McKelvey, "10-16 μm broadband quantum well infrared photodetector," Appl. Phys. Lett., vol. 72, pp. 2427-2429, 1998.
48. W. A. Beck, "Photo conductive gain and generation-recombination noise in multiple-quantum-well infrared detectors," Appl. Phys. Lett., vol. 63, pp. 3589-3591, 1993.
49. H. C. Liu, "Noise gain and operating temperature of quantum well infrared photodetectors," Appl. Phys. Lett., vol. 61, pp. 2703-2705, 1992.
50. J. Allam, F. Capasso, K. Alavi, and A. Y. Cho, "Impact ionization across the band-edge discontinuity with very large ionization rate ratio in a superlattice with graded wells," in Proc. 13th Int. Symp. GaAs and Related Compounds, Bristol Institute of Physics, W. T. Lindley, Ed., 1987, pp. 405-410.