Optimizing the spacer layer thickness of vertically stacked InAs/GaAs quantum dots

Materials Science and Engineering C

Volumn 26, Issue 2-3, 2006, Pages 374-377

  Ilahi, B ^a   Sfaxi, L ^a   Hassen, F ^a   Salem, B ^b,d   Bremond, G ^b   Marty, O ^c   Bouzaiene, L ^a   Maaref, H ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c UNIVERSITÉ LYON 1   (France)

^d UNIVERSITÉ DE SHERBROOKE   (Canada)

Author keywords

Quantum dots; Spacer thickness; Vertical stacking

Indexed keywords

COUPLED CIRCUITS; MOLECULAR BEAM EPITAXY; MULTILAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

ELECTRONIC COUPLING; SPACER THICKNESS; VERTICAL STACKING;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 32844466247     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msec.2005.10.034     Document Type: Conference Paper

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