Self-assembling quantum dots for optoelectronic devices on Si and GaAs

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 9, Issue 1, 2001, Pages 164-174

  Eberl, K ^a   Lipinski, M O ^a   Manz, Y M ^a   Winter, W ^a   Jin Phillipp, N Y ^a   Schmidt, O G ^a  

^a Max Planck Insitut F   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GROUND STATE; INJECTION LASERS; INTERDIFFUSION (SOLIDS); PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; STRAIN;

GALLIUM INDIUM PHOSPHIDE; INDIUM ARSENIDE; STRANSKI-KRASTANOV GROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035154315     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(00)00190-9     Document Type: Article

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