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Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 582-585

Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs

(8) Hospodkova A a Hulicius, E a Oswald, J a Pangrac J a Mates, T a Kuldova K a Melichar, K a Simecek T a

a INSTITUTE OF PHYSICS (Czech Republic)

Author keywords

A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; B1. Arsenides; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CONCENTRATION (PROCESS); GROUND STATE; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

ENERGY DIFFERENCE; EXCITED STATES; SEMICONDUCTING III-V MATERIALS; STRAIN-REDUCING LAYER (SRL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846431260 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.10.157 Document Type: Article

Times cited : (23)

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