High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity

IEEE Photonics Technology Letters

Volumn 16, Issue 5, 2004, Pages 1361-1363

  Chakrabarti, S ^a   Stiff Roberts, A D ^a   Bhattacharya, P ^a   Gunapala, S ^b   Bandara, S ^b   Rafol, S B ^b   Kennerly, S W ^c  

^a University of Michigan   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Detectivity; InAs GaAs; Infrared detector; Quantum dots; Responsivity

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; HIGH TEMPERATURE OPERATIONS; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE;

DARK CURRENT DENSITY; FOCAL PLANE ARRAYS; PEAK DETECTIVITY; PEAK RESPONSIVITY; QUANTUM DOT INFRARED PHOTODETECTORS;

PHOTODETECTORS;

EID: 2442511940     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.825974     Document Type: Article

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