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Volumn 280, Issue 3-4, 2005, Pages 378-384

Structural and photoluminescence characteristics of molecular beam epitaxy-grown vertically aligned In0.33Ga0.67As/GaAs quantum dots

(8) Srinivasan, T a Singh, S N a Tiwari, Umesh a Sharma, R K a Muralidharan, R a Sridhara Rao, D V b Balamuralikrishnan, R b Muraleedharan, K b

a SOLID STATE PHYSICS LABORATORY (India)

b DEFENCE METALLURGICAL RESEARCH LABORATORY (India)

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

ELECTRONS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; REFLECTION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY;

SELF ASSEMBLED QUANTUM DOTS; SEMICONDUCTOR III-V MATERIALS; X-RAY ROCKING CURVE; ZERO-DIMENSIONAL STRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 20344362438 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.04.010 Document Type: Article

Times cited : (25)

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