Thermal oxidation of chemical vapour deposited tungsten layers on silicon substrates for embedded non-volatile memory application

Thin Solid Films

Volumn 517, Issue 16, 2009, Pages 4534-4539

  Sohal, Rakesh ^a   Walczyk, Christian ^a   Zaumseil, Peter ^a   Wolansky, Dirk ^a   Fox, Alexander ^a   Tillack, Bernd ^a   Müssig, Hans Joachim ^a   Schroeder, Thomas ^a  

^a IHP   (Germany)

Author keywords

Non volatile memory; Resistive switching; Stoichiometry; Tungsten oxide

Indexed keywords

BACK END OF LINES; CHARACTERISATION; CHEMICAL VAPOURS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CRYSTALLISATION; GROWTH TEXTURES; MONOCLINIC PHASE; NON-VOLATILE MEMORY; NON-VOLATILE MEMORY APPLICATIONS; OXIDATION PROCESS; RESISTIVE RANDOM ACCESS MEMORIES; RESISTIVE SWITCHING; SILICON SUBSTRATES; THERMAL OXIDATIONS; TUNGSTEN LAYERS; TUNGSTEN OXIDE; X-RAY DIFFRACTION INVESTIGATIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

CELL MEMBRANES; FILM PREPARATION; OXIDATION; OXIDE FILMS; OXIDES; OXYGEN; RANDOM ACCESS STORAGE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; STOICHIOMETRY; SWITCHING SYSTEMS; TITANIUM COMPOUNDS; TITANIUM NITRIDE; TUNGSTEN; TUNGSTEN COMPOUNDS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67349227809     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.12.036     Document Type: Article

References (46)

1. In: Waser R. (Ed). Nanoelectronics and Information Technology (2005), Wiley-VCH, Berlin
2. Fox A., Ehwald K.E., Schley P., Barth R., Marschmeyer S., Wolf C., Stikanov V.E., Gromovyy A., and Hudyryev A. Microelectron. J. 37 (2006) 1194
3. Ramesh R., Aggarwal S., and Auciello O. Mater. Sci. Eng., R 32 (2001) 191
4. Lai S., and Lowrey T. IEEE Int. Electron. Devices Meet. Tech. Dig. (2001) 803
5. Lacaita A.L. Solid-State Electron. 50 (2006) 24
6. Katti R.R. J. Appl. Phys. 91 (2002) 7245
7. Daughton J.M. Thin Solid Films 216 (1992) 162
8. Bez R., and Pirovano A. Mater. Sci. Semicond. Process. 7 (2004) 349
9. Waser R., and Aono M. Nat. Mater. 6 (2007) 833
10. Baek I.G. IEEE Int. Electron Devices Meet. Tech. Dig. (2005) 750
11. Ovshinsky S.R. Phys. Rev. Lett. 36 (1976) 1469
12. Hovel H.J., and Urgell J.J. J. Appl. Phys. 42 (1971) 5076
13. Sawa A., Fujii T., Kawasaki M., and Tokura Y. Appl. Phys. Lett. 85 (2004) 4073
14. Hiatt W.R., and Hickmott T.W. Appl. Phys. Lett. 6 (1965) 106
15. Hickmott T.W. J. Vac. Sci. Technol. 6 (1969) 828
16. Chopra K.L. J. Appl. Phys. 36 (1965) 184
17. Argall F. Solid-State Electron. 11 (1968) 535
18. Gibbons J.F., and Beadle W.E. Solid-State Electron. 7 (1964) 785
19. Tägtström P., and Jansson U. Thin Solid Films 352 (1999) 107
20. Patra A., Auddy K., Ganguli D., Livage J., and Biswas P.K. Mater. Lett. 58 (2004) 1059
21. Marsen B., Cole B., and Miller E.L. Sol. Energy Mater. Sol. Cells 91 (2007) 1954
22. Sivakumar R., Gopalakrishnan R., Jayachandran M., and Sanjeeviraja C. Opt. Mater. 29 (2007) 679
23. Romanyuk A., Melnik V., and Oelhafen P. Nucl. Instrum. Methods Phys. Res., Sect. B 232 (2005) 358
24. Filipescu M., Orlando S., Russo V., Lamperti A., Purice A., Moldovan A., and Dinescu M. Appl. Surf. Sci. 253 (2007) 8258
25. Soto G., Cruz W.D.L., Díaz J.A., Machorro R., Castillón F.F., and Farías M.H. Appl. Surf. Sci. 218 (2003) 281
26. Enesca A., Enache C., Duta A., and Schoonman J. J. Eur. Ceram. Soc. 26 (2006) 571
27. Powell C.J. National Institute of Standards and Technology (2000)
28. Tanuma S., Powell C.J., and Penn D.R. Surf. Interface Anal. 11 (1988) 577
29. Nöller H.G., Polaschegg H.D., and Schillalies H. J. Electron Spectrosc. Relat. Phenom. 5 (1974) 705
30. P. Zaumzeil, IHP XRD and XRR simulation software RCRefSimW (2008).
31. Fromhold A.T., and Cook E.L. Phys. Rev. 163 (1967) 650
32. Atanassova E., Dimitrova T., and Koprinarova J. Appl. Surf. Sci. 84 (1995) 193
33. Aoki T., Matsushita T., Suzuki A., Tanabe K., and Okuda M. Thin Solid Films 509 (2006) 107
34. Henley W.B., and Sacks G.J. J. Electrochem. Soc. 144 (1997) 1045
35. De Angelis B.A., and Schiavello M. J. Solid State Chem. 21 (1977) 67
36. Belyakov A. Glass Ceram. 56 (1999) 85
37. Siokou A., Leftheriotis G., Papaefthimiou S., and Yianoulis P. Surf. Sci. 482-485 (2001) 294
38. Inouye A., Yamamoto S., Nagata S., Yoshikawa M., and Shikama T. Nucl. Instrum. Methods Phys. Res., Sect. B 266 (2008) 3381
39. Fadley C.S., Baird R.J., Siekhaus W., Novakov T., and Bergström S.Å.L. J. Electron. Spectrosc. Relat. Phenom. 4 (1974) 93
40. Scofield J.H. J. Electron. Spectrosc. Relat. Phenom. 8 (1976) 129
41. Bittencourt C., Landers R., Llobet E., Correig X., and Calderer J. Semicond. Sci. Technol. 17 (2002) 522
42. Locherer K.R., Swainson I.P., and Salje E.K.H. J. Phys.: Condens. Matter 11 (1999) 6737
43. Boulova M., and Lucazeau G. J. Solid State Chem. 167 (2002) 425
44. Moulzolf S.C., LeGore L.J., and Lad R.J. Thin Solid Films 400 (2001) 56
45. Kozicki M.N.G., Balakrishnan C., Mitkova M., and M. IEEE Trans. Nanotechnol. 5 (2006) 535
46. ChiaHua H.L., Lee E.K., Pan M.D., Yao C.L., Hsieh Y.D., Liu K.Y., Lu R., and C.Y. IEEE Symposium on VLSI Technology, IEEE, Kyoto (2007) 228