A surface study of wet etched AlGaN epilayers grown by hot-wall MOCVD

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 242-245

  Syvajarvi M ^a   Kakanakova Georgieva, A ^a   Yazdi, G R ^a   Karar, A ^a   Forsberg, U ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

A1. Characterization; A2. Growth from vapour; A2. Single crystal growth

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACE ROUGHNESS;

GROWTH FROM VAPOUR; SINGLE-CRYSTAL GROWTH; SUBSTRATE-INDUCED DEFECTS;

EPITAXIAL GROWTH;

EID: 33847272034     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.020     Document Type: Article

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