Origin of etch delay time in Cl 2 dry etching of AlGaN/GaN structures

Applied Physics Letters

Volumn 83, Issue 23, 2003, Pages 4779-4781

  Buttari, D ^a   Chini, A ^a   Palacios, T ^a   Coffie, R ^a   Shen, L ^a   Xing, H ^a   Heikman, S ^a   McCarthy, L ^a   Chakraborty, A ^a   Keller, S ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEOXIDIZING PLASMAS; ETCH DELAY TIME; ETCH SELECTIVITY;

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; BINDING ENERGY; CHLORINE; DRY ETCHING; HIGH ELECTRON MOBILITY TRANSISTORS; OXIDATION; OXIDES; PHOTORESISTS; PLASMA ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACE CHEMISTRY; VAPORIZATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0346306373     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1632035     Document Type: Article

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