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Journal of Applied Physics

Volumn 106, Issue 12, 2009, Pages

Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates

(5) Song, Yuxin a Wang, Shumin a Tngring, Ivar a Lai, Zonghe a Sadeghi, Mahdad a

a CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL OBSERVATION; GAAS SUBSTRATES; MATERIAL PROPERTY; METAMORPHIC DEVICES; PHYSICAL MECHANISM; SI-DOPING; THREADING DISLOCATION DENSITIES;

GALLIUM ALLOYS; GRADING; MATERIALS PROPERTIES; OPTOELECTRONIC DEVICES; SEMICONDUCTING INDIUM; SEMICONDUCTOR DOPING; SILICON ALLOYS; SURFACE ROUGHNESS;

SURFACE STRUCTURE;

EID: 73849137774 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3273492 Document Type: Article

Times cited : (26)

References (43)

1
- 0032140083
- 1041-1135. 10.1109/68.701506
- K. Otsubo, J. Shoji, T. Kusunoki, T. Suzuki, T. Uchida, Y. Nishijima, K. Nakajima, and H. Ishikawa, IEEE Photonics Technol. Lett. 1041-1135 10, 1073 (1998). 10.1109/68.701506
- (1998) IEEE Photonics Technol. Lett. , vol.10 , pp. 1073
- Otsubo, K.¹ Shoji, J.² Kusunoki, T.³ Suzuki, T.⁴ Uchida, T.⁵ Nishijima, Y.⁶ Nakajima, K.⁷ Ishikawa, H.⁸

2
- 36749112822
- 0003-6951. 10.1063/1.1655104
- C. J. Nuese, R. E. Enstrom, and M. Ettenberg, Appl. Phys. Lett. 0003-6951 24, 83 (1974). 10.1063/1.1655104
- (1974) Appl. Phys. Lett. , vol.24 , pp. 83
- Nuese, C.J.¹ Enstrom, R.E.² Ettenberg, M.³

3
- 73849145947
- (unpublished), Conference Proceedings No. 13
- G. I. Ng, K. Radhakrishnan, and H. Wang, GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, 2005 (unpublished), Conference Proceedings No. 13.
- (2005) GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
- Ng, G.I.¹ Radhakrishnan, K.² Wang, H.³

4
- 63349091067
- 0013-5194. 10.1049/el.2009.0263
- M. Arai, T. Tadokoro, T. Fujisawa, W. Kobayashi, K. Nakashima, M. Yuda, and Y. Kondo, Electron. Lett. 0013-5194 45, 359 (2009). 10.1049/el.2009.0263
- (2009) Electron. Lett. , vol.45 , pp. 359
- Arai, M.¹ Tadokoro, T.² Fujisawa, T.³ Kobayashi, W.⁴ Nakashima, K.⁵ Yuda, M.⁶ Kondo, Y.⁷

5
- 67650908879
- 1077-260X
- M. Arai, K. Nakashima, T. Fujisawa, T. Tadokoro, W. Kobayashi, M. Yuda, and Y. Kondo, IEEE J. Sel. Top. Quantum Electron. 1077-260X 15, 724 (2009).
- (2009) IEEE J. Sel. Top. Quantum Electron. , vol.15 , pp. 724
- Arai, M.¹ Nakashima, K.² Fujisawa, T.³ Tadokoro, T.⁴ Kobayashi, W.⁵ Yuda, M.⁶ Kondo, Y.⁷

6
- 55349115734
- 0013-5194. 10.1049/el:20082657
- M. Arai, T. Fujisawa, W. Kobayashi, K. Nakashima, M. Yuda, and Y. Kondo, Electron. Lett. 0013-5194 44, 1359 (2008). 10.1049/el:20082657
- (2008) Electron. Lett. , vol.44 , pp. 1359
- Arai, M.¹ Fujisawa, T.² Kobayashi, W.³ Nakashima, K.⁴ Yuda, M.⁵ Kondo, Y.⁶

7
- 73849117360
- 0256-307X
- H. L. Wang, D. H. Wu, B. P. Wu, H. Q. Ni, S. S. Huang, Y. H. Xiong, P. F. Wang, Q. Han, Z. C. Niu, I. Tangring, and S. M. Wang, Chin. Phys. Lett. 0256-307X 26, 3 (2009).
- (2009) Chin. Phys. Lett. , vol.26 , pp. 3
- Wang, H.L.¹ Wu, D.H.² Wu, B.P.³ Ni, H.Q.⁴ Huang, S.S.⁵ Xiong, Y.H.⁶ Wang, P.F.⁷ Han, Q.⁸ Niu, Z.C.⁹ Tangring, I.¹⁰ Wang, S.M.¹¹

8
- 48949104546
- 1077-260X. 10.1109/JSTQE.2008.923295
- Z. Mi and P. Bhattacharya, IEEE J. Sel. Top. Quantum Electron. 1077-260X 14, 1171 (2008). 10.1109/JSTQE.2008.923295
- (2008) IEEE J. Sel. Top. Quantum Electron. , vol.14 , pp. 1171
- Mi, Z.¹ Bhattacharya, P.²

9
- 44649158833
- Molecular beam epitaxial growth and characteristics of 1.52 μm metamorphic InAs quantum dot lasers on GaAs
- DOI 10.1116/1.2889386
- Z. Mi, C. Wu, J. Yang, and P. Bhattacharya, J. Vac. Sci. Technol. B 1071-1023 26, 1153 (2008). 10.1116/1.2889386 (Pubitemid 351776838)
- (2008) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.26 , Issue.3 , pp. 1153-1156
- Mi, Z.¹ Wu, C.² Yang, J.³ Bhattacharya, P.⁴

10
- 36549004984
- 1.58 μm InGaAs quantum well laser on GaAs
- DOI 10.1063/1.2803756
- I. Tngring, H. Q. Ni, B. P. Wu, D. H. Wu, Y. H. Xiong, S. S. Huang, Z. C. Niu, S. M. Wang, Z. H. Lai, and A. Larsson, Appl. Phys. Lett. 0003-6951 91, 221101 (2007). 10.1063/1.2803756 (Pubitemid 350191590)
- (2007) Applied Physics Letters , vol.91 , Issue.22 , pp. 221101
- Tngring, I.¹ Ni, H.Q.² Wu, B.P.³ Wu, D.H.⁴ Xiong, Y.H.⁵ Huang, S.S.⁶ Niu, Z.C.⁷ Wang, S.M.⁸ Lai, Z.H.⁹ Larsson, A.¹⁰

11
- 33947320135
- MBE-grown metamorphic lasers for applications at telecom wavelengths
- DOI 10.1016/j.jcrysgro.2006.09.035, PII S0022024806009031
- N. N. Ledentsov, V. A. Shchukin, T. Kettler, K. Posilovic, D. Bimberg, L. Y. Karachinsky, A. Y. Gladyshev, M. V. Maximov, I. I. Novikov, Y. M. Shernyakov, A. E. Zhukov, V. M. Ustinov, and A. R. Kovsh, J. Cryst. Growth 0022-0248 301-302, 914 (2007). 10.1016/j.jcrysgro.2006.09.035 (Pubitemid 46440992)
- (2007) Journal of Crystal Growth , vol.301-302 , Issue.SPEC. ISS. , pp. 914-922
- Ledentsov, N.N.¹ Shchukin, V.A.² Kettler, T.³ Posilovic, K.⁴ Bimberg, D.⁵ Karachinsky, L.Ya.⁶ Gladyshev, A.Yu.⁷ Maximov, M.V.⁸ Novikov, I.I.⁹ Shernyakov, Y.M.¹⁰ Zhukov, A.E.¹¹ Ustinov, V.M.¹² Kovsh, A.R.¹³

12
- 33745103490
- 1.27 μm metamorphic InGaAs quantum well lasers on GaAs substrates
- DOI 10.1049/el:20060943
- I. Tngring, S. M. Wang, M. Sadeghi, and A. Larsson, Electron. Lett. 0013-5194 42, 691 (2006). 10.1049/el:20060943 (Pubitemid 43882464)
- (2006) Electronics Letters , vol.42 , Issue.12 , pp. 691-693
- Tangring, I.¹ Wang, S.² Sadeghi, M.³ Larsson, A.⁴

13
- 33750018904
- Growth and characteristics of ultralow threshold 1.45 μm metamorphic InAs tunnel injection quantum dot lasers on GaAs
- DOI 10.1063/1.2358847
- Z. Mi, P. Bhattacharya, and J. Yang, Appl. Phys. Lett. 0003-6951 89, 153109 (2006). 10.1063/1.2358847 (Pubitemid 44570599)
- (2006) Applied Physics Letters , vol.89 , Issue.15 , pp. 153109
- Mi, Z.¹ Bhattacharya, P.² Yang, J.³

14
- 1942541162
- 0003-6951. 10.1063/1.1669067
- G. Balakrishnan, S. Huang, T. J. Rotter, A. Stintz, L. R. Dawson, K. J. Malloy, H. Xu, and D. L. Huffaker, Appl. Phys. Lett. 0003-6951 84, 2058 (2004). 10.1063/1.1669067
- (2004) Appl. Phys. Lett. , vol.84 , pp. 2058
- Balakrishnan, G.¹ Huang, S.² Rotter, T.J.³ Stintz, A.⁴ Dawson, L.R.⁵ Malloy, K.J.⁶ Xu, H.⁷ Huffaker, D.L.⁸

15
- 0141749130
- Metamorphic Lasers for 1.3-μm Spectral Range Grown on GaAs Substrates by MBE
- DOI 10.1134/1.1610131
- A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, A. P. Vasil'ev, E. V. Nikitina, N. V. Kryzhanovskaya, A. G. Gladyshev, Y. M. Shernyakov, Y. G. Musikhin, M. V. Maksimov, N. N. Ledentsov, V. M. Ustinov, and Z. I. Alferov, Semiconductors 1063-7826 37, 1119 (2003). 10.1134/1.1610131 (Pubitemid 37211630)
- (2003) Semiconductors , vol.37 , Issue.9 , pp. 1119-1122
- Zhukov, A.E.¹ Kovsh, A.R.² Mikhrin, S.S.³ Semenova, E.S.⁴ Maleev, N.A.⁵ Vasil'ev, A.P.⁶ Nikitina, E.V.⁷ Kryzhanovskaya, N.V.⁸ Gladyshev, A.G.⁹ Shernyakov, Y.M.¹⁰ Musikhin, Y.G.¹¹ Maksimov, M.V.¹² Ledentsov, N.N.¹³ Ustinov, V.M.¹⁴ Alferov, Z.I.¹⁵

16
- 0042010037
- 0021-8979. 10.1063/1.1582229
- Y. C. Xin, L. G. Vaughn, L. R. Dawson, A. Stintz, Y. Lin, L. F. Lester, and D. L. Huffaker, J. Appl. Phys. 0021-8979 94, 2133 (2003). 10.1063/1.1582229
- (2003) J. Appl. Phys. , vol.94 , pp. 2133
- Xin, Y.C.¹ Vaughn, L.G.² Dawson, L.R.³ Stintz, A.⁴ Lin, Y.⁵ Lester, L.F.⁶ Huffaker, D.L.⁷

17
- 21544454349
- 0003-6951. 10.1063/1.112707
- S. I. Molina, F. J. Pacheco, D. Araujo, R. Garcia, A. Sacedon, E. Calleja, Z. Yang, and P. Kidd, Appl. Phys. Lett. 0003-6951 65, 2460 (1994). 10.1063/1.112707
- (1994) Appl. Phys. Lett. , vol.65 , pp. 2460
- Molina, S.I.¹ Pacheco, F.J.² Araujo, D.³ Garcia, R.⁴ Sacedon, A.⁵ Calleja, E.⁶ Yang, Z.⁷ Kidd, P.⁸

18
- 31144446211
- Effects of substrate temperature on the growth of InGaAs compositionally graded buffers and on quantum well structures grown above them
- DOI 10.1116/1.2052727
- H. K. H. Choy and C. G. Fonstad, J. Vac. Sci. Technol. 0022-5355 23, 2109 (2005). 10.1116/1.2052727 (Pubitemid 43127185)
- (2005) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.23 , Issue.5 , pp. 2109-2113
- Choy, H.K.H.¹ Fonstad, C.G.²

19
- 0000069872
- 0021-8979. 10.1063/1.371439
- F. Romanato, E. Napolitani, A. Carnera, A. V. Drigo, L. Lazzarini, G. Salvati, C. Ferrari, A. Bosacchi, and S. Franchi, J. Appl. Phys. 0021-8979 86, 4748 (1999). 10.1063/1.371439
- (1999) J. Appl. Phys. , vol.86 , pp. 4748
- Romanato, F.¹ Napolitani, E.² Carnera, A.³ Drigo, A.V.⁴ Lazzarini, L.⁵ Salvati, G.⁶ Ferrari, C.⁷ Bosacchi, A.⁸ Franchi, S.⁹

20
- 19944397497
- Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells
- DOI 10.1016/j.tsf.2005.02.013, PII S0040609005002014
- F. Capotondi, G. Biasiol, D. Ercolani, V. Grillo, E. Carlino, F. Romanato, and L. Sorba, Thin Solid Films 0040-6090 484, 400 (2005). 10.1016/j.tsf.2005.02.013 (Pubitemid 40751928)
- (2005) Thin Solid Films , vol.484 , Issue.1-2 , pp. 400-407
- Capotondi, F.¹ Biasiol, G.² Ercolani, D.³ Grillo, V.⁴ Carlino, E.⁵ Romanato, F.⁶ Sorba, L.⁷

21
- 84907820327
- unpublished
- Y. Qiu, T. Walther, H. Y. Liu, C. Y. Jin, M. Hopkinson, and A. G. Cullis, 15th Conference on Microscopy of Semiconducting Materials, 2007 (unpublished), p. 263.
- (2007) 15th Conference on Microscopy of Semiconducting Materials , pp. 263
- Qiu, Y.¹ Walther, T.² Liu, H.Y.³ Jin, C.Y.⁴ Hopkinson, M.⁵ Cullis, A.G.⁶

22
- 70350113655
- 0021-8979. 10.1063/1.3243312
- B. Bertoli, E. N. Suarez, J. E. Ayers, and F. C. Jain, J. Appl. Phys. 0021-8979 106, 073519 (2009). 10.1063/1.3243312
- (2009) J. Appl. Phys. , vol.106 , pp. 073519
- Bertoli, B.¹ Suarez, E.N.² Ayers, J.E.³ Jain, F.C.⁴

23
- 0031550005
- 0022-0248. 10.1016/S0022-0248(97)00377-1
- J. F. Valtuefia, A. Sacedon, A. L. Alvarez, I. Izpura, F. Call, E. Calleja, G. MacPherson, P. J. Goodhew, F. J. Pacheco, R. Garcia, and S. I. Molina, J. Cryst. Growth 0022-0248 182, 281 (1997). 10.1016/S0022-0248(97)00377- 1
- (1997) J. Cryst. Growth , vol.182 , pp. 281
- Valtuefia, J.F.¹ Sacedon, A.² Alvarez, A.L.³ Izpura, I.⁴ Call, F.⁵ Calleja, E.⁶ MacPherson, G.⁷ Goodhew, P.J.⁸ Pacheco, F.J.⁹ Garcia, R.¹⁰ Molina, S.I.¹¹

24
- 33947311064
- Invalidity of graded buffers for InAs grown on GaAs (0 0 1)-A comparison between direct and graded-buffer growth
- DOI 10.1016/j.jcrysgro.2006.11.084, PII S0022024806013613
- Y. Jeong, H. Choi, and T. Suzuki, J. Cryst. Growth 0022-0248 301-302, 235 (2007). 10.1016/j.jcrysgro.2006.11.084 (Pubitemid 46441062)
- (2007) Journal of Crystal Growth , vol.301-302 , Issue.SPEC. ISS. , pp. 235-239
- Jeong, Y.¹ Choi, H.² Suzuki, T.³

25
- 33847173355
- Manipulation of strain relaxation in metamorphic heterostructures
- DOI 10.1063/1.2435609
- I. Tngring, S. M. Wang, X. R. Zhu, Z. H. Lai, M. Sadeghi, and A. Larsson, Appl. Phys. Lett. 0003-6951 90, 071904 (2007). 10.1063/1.2435609 (Pubitemid 46280677)
- (2007) Applied Physics Letters , vol.90 , Issue.7 , pp. 071904
- Tangring, I.¹ Wang, S.M.² Zhu, X.R.³ Larsson, A.⁴ Lai, Z.H.⁵ Sadeghi, M.⁶

26
- 63349083356
- 0022-0248. 10.1016/j.jcrysgro.2008.11.019
- I. Tngring, Y. X. Song, Z. H. Lai, S. M. Wang, M. Sadeghi, and A. Larsson, J. Cryst. Growth 0022-0248 311, 1684 (2009). 10.1016/j.jcrysgro.2008. 11.019
- (2009) J. Cryst. Growth , vol.311 , pp. 1684
- Tngring, I.¹ Song, Y.X.² Lai, Z.H.³ Wang, S.M.⁴ Sadeghi, M.⁵ Larsson, A.⁶

27
- 0001759401
- 0003-6951. 10.1063/1.111287
- S. Y. Shiryaev, F. Jensen, and J. W. Petersen, Appl. Phys. Lett. 0003-6951 64, 3305 (1994). 10.1063/1.111287
- (1994) Appl. Phys. Lett. , vol.64 , pp. 3305
- Shiryaev, S.Y.¹ Jensen, F.² Petersen, J.W.³

28
- 85047675945
- 0022-0248. 10.1016/0022-0248(94)00975-9
- M. Lopez and Y. Nomura, J. Cryst. Growth 0022-0248 150, 68 (1995). 10.1016/0022-0248(94)00975-9
- (1995) J. Cryst. Growth , vol.150 , pp. 68
- Lopez, M.¹ Nomura, Y.²

29
- 0001544011
- 0163-1829. 10.1103/PhysRevB.40.6149
- J. M. Moison, C. Guille, F. Houzay, F. Barthe, and M. V. Rompay, Phys. Rev. B 0163-1829 40, 6149 (1989). 10.1103/PhysRevB.40.6149
- (1989) Phys. Rev. B , vol.40 , pp. 6149
- Moison, J.M.¹ Guille, C.² Houzay, F.³ Barthe, F.⁴ Rompay, M.V.⁵

30
- 21544461089
- 0003-6951. 10.1063/1.107835
- K. Muraki, S. Fukatsu, and Y. Shiraki, Appl. Phys. Lett. 0003-6951 61, 557 (1992). 10.1063/1.107835
- (1992) Appl. Phys. Lett. , vol.61 , pp. 557
- Muraki, K.¹ Fukatsu, S.² Shiraki, Y.³

31
- 34249891049
- Surface morphology induced InAs quantum dot or dash formation on InGaAsP/InP (1 0 0)
- DOI 10.1016/j.jcrysgro.2007.04.035, PII S002202480700423X
- N. Sritirawisarn, F. W. M. van Otten, T. J. Eijkemans, and R. Notzel, J. Cryst. Growth 0022-0248 305, 63 (2007). 10.1016/j.jcrysgro.2007.04.035 (Pubitemid 46874449)
- (2007) Journal of Crystal Growth , vol.305 , Issue.1 , pp. 63-69
- Sritirawisarn, N.¹ Van Otten, F.W.M.² Eijkemans, T.J.³ Notzel, R.⁴

32
- 2642561313
- 1386-9477. 10.1016/j.physe.2003.11.276
- F. A. Zhao, J. Wu, P. Jin, B. Xu, Z. G. Wang, and C. L. Zhang, Physica E (Amsterdam) 1386-9477 23, 31 (2004). 10.1016/j.physe.2003.11.276
- (2004) Physica e (Amsterdam) , vol.23 , pp. 31
- Zhao, F.A.¹ Wu, J.² Jin, P.³ Xu, B.⁴ Wang, Z.G.⁵ Zhang, C.L.⁶

33
- 33646187370
- 0003-6951. 10.1063/1.2189915
- F. Patella, F. Arciprete, M. Fanfoni, and A. Balzarotti, Appl. Phys. Lett. 0003-6951 88, 161903 (2006). 10.1063/1.2189915
- (2006) Appl. Phys. Lett. , vol.88 , pp. 161903
- Patella, F.¹ Arciprete, F.² Fanfoni, M.³ Balzarotti, A.⁴

34
- 0035605688
- Ostwald ripening of quantum-dot nanostructures
- DOI 10.1134/1.1427975
- R. D. Vengrenovich, Yu. V. Gudyma, and S. V. Yarema, Semiconductors 1063-7826 35, 1378 (2001). 10.1134/1.1427975 (Pubitemid 33386368)
- (2001) Semiconductors , vol.35 , Issue.12 , pp. 1378-1382
- Vengrenovich, R.D.¹ Gudyma, Yu.V.² Yarema, S.V.³

35
- 0022792162
- 0021-4922. 10.1143/JJAP.25.L868
- Y. Horikoshi, M. Kawashima, and H. Yamaguchi, Jpn. J. Appl. Phys., Part 1 0021-4922 25, L868 (1986). 10.1143/JJAP.25.L868
- (1986) Jpn. J. Appl. Phys., Part 1 , vol.25 , pp. 868
- Horikoshi, Y.¹ Kawashima, M.² Yamaguchi, H.³

36
- 21544472035
- 0003-6951. 10.1063/1.108842
- J. Tersoff, Appl. Phys. Lett. 0003-6951 62, 693 (1993). 10.1063/1.108842
- (1993) Appl. Phys. Lett. , vol.62 , pp. 693
- Tersoff, J.¹

37
- 36549104246
- 0021-8979. 10.1063/1.346560
- L. B. Freund, J. Appl. Phys. 0021-8979 68, 2073 (1990). 10.1063/1.346560
- (1990) J. Appl. Phys. , vol.68 , pp. 2073
- Freund, L.B.¹

38
- 44349114271
- Wiley, New York
- J. E. Ayers, Heteroepitaxy of Semiconductors. Theory, Growth and Characterization (Wiley, New York, 2007).
- (2007) Heteroepitaxy of Semiconductors. Theory, Growth and Characterization
- Ayers, J.E.¹

39
- 0002067455
- 10.1088/0959-5309/52/1/305 0370-1328
- E. Peierls, Proc. Phys. Soc. 52, 34 (1940). 10.1088/0959-5309/52/1/305 0370-1328
- (1940) Proc. Phys. Soc. , vol.52 , pp. 34
- Peierls, E.¹

40
- 0027109719
- Post-growth thermal annealing of GaAs on Si(001) grown by organometallic vapor phase epitaxy
- DOI 10.1016/0022-0248(92)90346-K
- J. E. Ayers, L. J. Schowalter, and S. K. Ghandhi, J. Cryst. Growth 0022-0248 125, 329 (1992). 10.1016/0022-0248(92)90346-K (Pubitemid 23605832)
- (1992) Journal of Crystal Growth , vol.125 , Issue.1-2 , pp. 329-335
- Ayers, J.E.¹ Schowalter, L.J.² Ghandhi, S.K.³

41
- 18744438408
- Misfit dislocation and threading dislocation distributions in InGaAs and GeSi/Si partially relaxed heterostructures
- DOI 10.1016/S0921-5107(01)00994-1, PII S0921510701009941
- C. Ferrari, G. Rossetto, and E. A. Fitzgerald, Mater. Sci. Eng., B 0921-5107 91-92, 437 (2002). 10.1016/S0921-5107(01)00994-1 (Pubitemid 34222795)
- (2002) Materials Science and Engineering B: Solid-State Materials for Advanced Technology , vol.91-92 , pp. 437-440
- Ferrari, C.¹ Rossetto, G.² Fitzgerald, E.A.³

42
- 0001218011
- 0022-5096. 10.1016/0022-5096(90)90027-2
- L. B. Freund, J. Mech. Phys. Solids 0022-5096 38, 657 (1990). 10.1016/0022-5096(90)90027-2
- (1990) J. Mech. Phys. Solids , vol.38 , pp. 657
- Freund, L.B.¹

43
- 21544467974
- 0021-8979. 10.1063/1.343380
- I. Yonenaga and K. Sumino, J. Appl. Phys. 0021-8979 65, 85 (1989). 10.1063/1.343380
- (1989) J. Appl. Phys. , vol.65 , pp. 85
- Yonenaga, I.¹ Sumino, K.²

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