Uncooled (25-85°C) 10 Gbit/s operation of 1.3 μ-range metamorphic Fabry-Perot laser on GaAs substrate

Electronics Letters

Volumn 45, Issue 7, 2009, Pages 359-360

  Arai, M ^a   Tadokoro, T ^a   Fujisawa, T ^a   Kobayashi, W ^a   Nakashima, K ^a   Yuda, M ^a   Kondo, Y ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LASERS; MODULATION; SEMICONDUCTING GALLIUM;

10-GBIT/S; DIRECT MODULATIONS; FABRY-PEROT LASERS; GAAS SUBSTRATES; LASER DIODES; THRESHOLD CURRENTS; UNCOOLED;

GALLIUM ALLOYS;

EID: 63349091067     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2009.0263     Document Type: Article

References (4)

1. Uchida, T., Kurakake, H., Soda, H., and Yamazaki, S.: ' 1.3m InGaAs/GaAs strained quantum well lasers with InGaP cladding layer ', Electron. Lett., 1994, 30, (7), p. 563-565 10.1049/el:19940378 0013-5194
2. Tångring, I., Wang, S.M., Sadeghi, M., Larsson, A., and Wang, X.D.: ' Metamorphic growth of 1.25-1.29m InGaAs quantum well lasers on GaAs by molecular beam epitaxy ', J. Cryst. Growth, 2007, 301-302, p. 971-974 10.1016/j.jcrysgro.2006.11.171 0022-0248
3. Wu, D., Wang, H., Wu, B., Ni, H., Huang, S., Xiong, Y., Wang, P., Han, Q., Niu, Z., Tångring, I., and Wang, S.M.: ' Low threshold current density 1.3mm metamorphic InGaAs/GaAs quantum well laser diodes ', Electron. Lett., 2008, 44, (7), p. 474-475 10.1049/el:20080106 0013-5194
4. Arai, M., Fujisawa, T., Kobayashi, W., Nakashima, K., Yuda, M., and Kondo, Y.: ' High-temperature operation of 1.26m Fabry-Perot laser with InGaAs metamorphic buffer on GaAs substrate ', Electron. Lett., 2008, 44, (23), p. 1359-1360 10.1049/el:20082657 0013-5194