Long-wavelength strained quantum-well lasers oscillating up to 210 °C on InGaAs ternary substrates

IEEE Photonics Technology Letters

Volumn 10, Issue 8, 1998, Pages 1073-1075

  Otsubo, K ^b   Shoji, H ^a,b   Kusunoki, T ^c   Suzuki, T ^c   Uchida, T ^b   Nishijima, Y ^c   Nakajima, K ^c   Ishikawa, H ^a,b  

^a IEEE

^b NEC CORPORATION   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Crystal growth; Indium compounds; Quantum well lasers; Semiconductor growth; Semiconductor lasers; Semiconductor materials; Temperature

Indexed keywords

CRYSTAL GROWTH; FABRICATION; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL INTERCONNECTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; TEMPERATURE;

BOND METHOD; ENERGY DISPERSIVE X RAY ANALYSIS; FULL WIDTH AT HALF MAXIMUM; OPTICAL INTERCONNECTION SYSTEMS; OPTICAL SUBSCRIBER; TERNARY SUBSTRATES;

QUANTUM WELL LASERS;

EID: 0032140083     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.701506     Document Type: Article

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