1.27 μm metamorphic InGaAs quantum well lasers on GaAs substrates

Electronics Letters

Volumn 42, Issue 12, 2006, Pages 691-693

  Tangring I ^a   Wang, S ^a   Sadeghi, M ^a   Larsson, A ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BUFFER AMPLIFIERS; ELECTRIC CURRENTS; HEAT TREATMENT; LASERS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

INGAAS QUANTUM WELL LASER; LASER PERFORMANCE; METAMORPHIC RIDGE-WAVEGUIDE (RWG); PULSED OPERATION; THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 33745103490     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20060943     Document Type: Article

References (8)

1. Wang, S.M., Wei, Y.Q., Wang, X.D., Zhao, Q.X., Sadeghi, M., and Larsson, A.: ' Very low threshold current density 1.3m GaInNAs single-quantum well lasers grown by molecular beam epitaxy ', J. Cryst. Growth, 2005, 278, p. 734-738
2. Park, G., Shchekin, O.B., Huffaker, D.L., and Deppe, D.G.: ' Low-threshold oxide-confined 1.3-m quantum-dot laser ', IEEE Photonics Technol. Lett., 2000, 12, p. 230-232
3. Ustinov, V.M., and Zhukow, A.E.: ' GaAs-based long-wavelength lasers ', Semicond. Sci. Technol., 2000, 15, p. R41
4. Zhukov, A.E., Kovsh, A.R., Mikhrin, S.S., Semenova, E.S., Maleev, N.A., Vasil'ev, A.P., Nikitina, E.V., Kryzhanovskaya, N.V., Gladyshev, A.G., Shernyakov, Yu.M., Musikhin, Yu.G., Maksimov, M.V., Ledentsov, N.N., Ustinov, V.M., and Alferov, Zh.I.: ' Metamorphic lasers for 1.3-m spectral range grown on GaAs by MBE ', Semiconductors, 2003, 37, (11), p. 1119-1122
5. Ledentsov, N.N., Kovsh, A.R., Zhukov, A.E., Maleev, N.A., Mikhrin, S.S., Vasil'ev, A.P., Semenova, E.S., Maximov, M.V., Shernyakov, Yu.M., Kryzhanovskaya, N.V., Ustinov, V.M., and Bimberg, D.: ' High performance quantum dot lasers on GaAs substrates operating in 1.5m range ', Electron. Lett., 2003, 39, p. 1126-1128
6. Tersoff, J.: ' Dislocations and strain relief in compositionally graded layers ', Appl. Phys. Lett., 1993, 62, p. 693-695
7. Tångring, I., Wang, S.M., Gu, Q.F., Wei, Y.Q., Sadeghi, M., Zhao, Q.X., Akram, M.N., Berggren, J., and Larsson, A.: ' Strong 1.3-1.6m light emission from metamorphic InGaAs quantum wells on GaAs ', Appl. Phys. Lett., 2005, 86, p. 171902
8. Tångring, I., Wang, S.M., Sadeghi, M., Gu, Q.F., and Larsson, A.: ' Optimization of 1.3m metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy ', J. Cryst. Growth, 2005, 281, p. 220-226