High-temperature operation of 1.26-μm ridge waveguide laser with inGaAs metamorphic buffer on GaAs substrate

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 3, 2009, Pages 724-730

  Arai, Masakazu ^a   Nakashima, Kiichi ^a   Fujisawa, Takeshi ^a   Tadokoro, Takashi ^a   Kobayashi, Wataru ^a   Yuda, Masahiro ^a   Kondo, Yasuhiro ^a  

^a NTT CORPORATION   (Japan)

Author keywords

InGaAs; Laser; Metamorphic; Uncooled

Indexed keywords

10 GB/ S; CLADDING LAYER; CONTINUOUS WAVES; DIRECT MODULATION; GAAS SUBSTRATES; INALGAAS; INGAAS; METAL-ORGANIC VAPOR PHASE EPITAXY; METAMORPHIC; METAMORPHIC BUFFERS; OPERATING TEMPERATURE; RELATIVE INTENSITY NOISE; RELAXATION OSCILLATION FREQUENCIES; RIDGE WAVEGUIDE LASERS; THREADING DISLOCATION DENSITIES; UNCOOLED;

CRYSTAL GROWTH; GALLIUM ALLOYS; HETEROJUNCTION BIPOLAR TRANSISTORS; LASERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SUBSTRATES; WAVEGUIDES;

LASER CLADDING;

EID: 67650908879     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2008.2011564     Document Type: Article

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