SCOPUS 정보 검색 플랫폼

Volumn 311, Issue 7, 2009, Pages 1684-1687

A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy

(6) Tangring I a Song, Y X a Lai, Z H a Wang, S M a Sadeghi, M a Larsson, A a

a CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

A1. Dislocations; A1. Doping; A3. Molecular beam epitaxy; A3. Semiconducting III V materials

Indexed keywords

CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; STRAIN CONTROL; STRAIN RELAXATION; SURFACE ROUGHNESS;

A1. DISLOCATIONS; A1. DOPING; A3. MOLECULAR BEAM EPITAXY; A3. SEMICONDUCTING III-V MATERIALS; GRADED COMPOSITIONS; LINEAR GRADING; MATERIAL PROPERTIES; METAMORPHIC DEVICES; N-TYPE DOPING; P TYPES; SI-DOPING; THREADING DISLOCATION DENSITIES;

MOLECULAR BEAMS;

EID: 63349083356 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.11.019 Document Type: Article

Times cited : (18)

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