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Volumn 23, Issue 5, 2005, Pages 2109-2113

Effects of substrate temperature on the growth of InGaAs compositionally graded buffers and on quantum well structures grown above them

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC PRESSURE; CROSSHATCHES; HIGH SUBSTRATE TEMPERATURES;

ARSENIC; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 31144446211 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.2052727 Document Type: Article

Times cited : (9)

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