High-temperature operation of 1.26m Fabry-Perot laser with InGaAs metamorphic buffer on GaAs substrate

Electronics Letters

Volumn 44, Issue 23, 2008, Pages 1359-1360

  Arai, M ^a   Fujisawa, T ^a   Kobayashi, W ^a   Nakashima, K ^a   Yuda, M ^a   Kondo, Y ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; LASERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; VAPOR PHASE EPITAXY; WAVEGUIDES;

GAAS SUBSTRATES; HIGH TEMPERATURES; HIGHEST OPERATING TEMPERATURES; METAMORPHIC BUFFERS; RIDGE WAVEGUIDES; WAVE OPERATIONS;

GALLIUM ALLOYS;

EID: 55349115734     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20082657     Document Type: Article

References (4)

1. 0 (140K) and low-threshold long-wavelength strained quantum well lasers on InGaAs ternary substrates ', Electron. Lett., 1997, 33, (21), p. 1795-1797 10.1049/el:19971238 0013-5194
2. Arai, M., Watanabe, T., Yuda, M., Kinoshita, K., Yoda, S., and Kondo, Y.: ' High-characteristic-temperature 1.3m-band laser on an InGaAs ternary substrate grown by the traveling liquidus-zone method ', IEEE J. Sel. Top. Quantum Electron., 2007, 13, p. 1295-1301 1077-260X
3. Uchida, T., Kurakake, H., Soda, H., and Yamazaki, S.: ' 1.3m InGaAs/GaAs strained quantum well lasers with InGaP cladding layer ', Electron. Lett., 1994, 30, (7), p. 563-565 10.1049/el:19940378 0013-5194
4. Tångring, I., Wang, S.M., Sadeghi, M., Larsson, A., and Wang, X.D.: ' Metamorphic growth of 1.25-1.29m InGaAs quantum well lasers on GaAs by molecular beam epitaxy ', J. Cryst. Growth, 2007, 301-302, p. 971-974 10.1016/j.jcrysgro.2006.11.171 0022-0248