Invalidity of graded buffers for InAs grown on GaAs (0 0 1)-A comparison between direct and graded-buffer growth

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 235-239

  Jeong, Y ^a   Choi, H ^a   Suzuki, T ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

A1. Line defects; A3. Graded buffers; A3. Lattice mismatched growth; A3. Molecular beam epitaxy; B2. InAs; B2. Semiconducting III V materials

Indexed keywords

BUFFER LAYERS; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GRADED BUFFERS; LATTICE MISMATCHED GROWTH; LINE DEFECTS; PLAN-VIEW TRANSMISSION ELECTRON MICROSCOPY (PTEM);

EPITAXIAL GROWTH;

EID: 33947311064     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.084     Document Type: Article

References (12)

1. Masato H., Matsuno T., and Inoue K. Jpn. J. Appl. Phys. 30 (1991) 3850
2. Mishima T., Higuchi K., Mori M., and Kudo M. J. Crystal Growth 150 (1995) 1230
3. Hwang K.C., Chao P.C., Creamer C., Nichols K.B., Wang S., Tu D., Kong W., Dugas D., and Patton G. IEEE Electron. Dev. Lett. 20 (1999) 551
4. Zheng H.Q., Radhakrishnan K., Wang H., Yuan K.H., and Ng G.I. Appl. Phys. Lett. 77 (2000) 869
5. Liu W.K., Lubyshev D., Wu Y., Fang X.M., Yurasits T., Cornfeld A.B., Mensa D., Jaganathan S., Pullela R., Dahlstrom M., Sundrarajan P.K., Mathew T., and Rodwell M. in: Proceedings of the 13th International Conference on InP and Related Materials (2001) 284
6. Ono H., Taniguchi S., and Suzuki T. Jpn. J. Appl. Phys. 43 (2004) 2259
7. Suzuki T., Ono H., and Taniguchi S. Sci. Tech. Adv. Mater. 6 (2005) 400
8. Sheldon P., Jones K.M., Al-Jassim M.M., and Yacobi B.G. J. Appl. Phys. 63 (1988) 5609
9. Tachikawa M., and Yamaguchi M. Appl. Phys. Lett. 56 (1989) 484
10. Sato T., Suzuki T., Tomiya S., and Yamada S. Physica B 376-377 (2006) 579
11. Ayers J.E. J. Crystal Growth 135 (1994) 71
12. Heinke H., Moller M.O., Hommel D., and Landwehr G. J. Crystal Growth 135 (1994) 41