Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001)

Applied Physics Letters

Volumn 88, Issue 16, 2006, Pages

  Patella, F ^a   Arciprete, F ^a   Fanfoni, M ^a   Balzarotti, A ^a   Placidi, E ^b  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b INFM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

CRITICAL THICKNESS; GROWTH TRANSITION; IN-GA INTERMIXING; INTERFACE STRAIN;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646187370     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2189915     Document Type: Article

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