Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells

Thin Solid Films

Volumn 484, Issue 1-2, 2005, Pages 400-407

  Capotondi, F ^a,b   Biasiol, G ^a   Ercolani, D ^a,b   Grillo, V ^a   Carlino, E ^a   Romanato, F ^a   Sorba, L ^a,b  

^a LABORATORIO TASC   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

112 Electrical properties and measurements; 294 Molecular beam epitaxy (MBE); 448 Structural properties; InGaAs

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN RATE; TENSILE STRESS; TRANSPORT PROPERTIES;

112 ELECTRICAL PROPERTIES AND MEASUREMENTS; 294 MOLECULAR BEAM EPITAXY (MBE); 448 STRUCTURAL PROPERTIES; INGAAS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 19944397497     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.02.013     Document Type: Article

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