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Volumn 182, Issue 3-4, 1997, Pages 281-291

Influence of the surface morphology on the relaxation of low-strained InxGa1 - xAs linear buffer structures

Author keywords

Buffer layers; Growth mode; InGaAs; Low strain; Relaxation mechanisms

Indexed keywords

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); MORPHOLOGY; NUCLEATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STRESS RELAXATION; SUBSTRATES; SURFACE ROUGHNESS;

EID: 0031550005     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00377-1     Document Type: Article
Times cited : (12)

References (36)
  • 20
    • 0040050067 scopus 로고    scopus 로고
    • Substrate cleavage edges have been used for 〈1 1 0〉 direction discrimination
    • Substrate cleavage edges have been used for 〈1 1 0〉 direction discrimination.
  • 29
    • 0040050068 scopus 로고    scopus 로고
    • note
    • To estimate the critical wavelength of sample E, it is necessary to use EC 2, including the grading surface strain and the strain due to the composition step.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.