High carrier concentrations of n- and p-doped GaN on Si(111) by nitrogen plasma-assisted molecular-beam epitaxy

Journal of Materials Research

Volumn 22, Issue 9, 2007, Pages 2623-2630

  Chuah, L S ^a   Hassan, Zai ^a   Ng, S S ^a   Abu Hassan, H ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DOPING (ADDITIVES); HOLE CONCENTRATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL PROPERTIES; SEMICONDUCTING SILICON;

MICRO-PHOTOLUMINESCENCE; RADIO FREQUENCY NITROGEN PLASMA; SILICON SUBSTRATES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 34748905331     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2007.0336     Document Type: Article

References (44)

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