General framework for single event effects rate prediction in microelectronics

IEEE Transactions on Nuclear Science

Volumn 56, Issue 6, 2009, Pages 3098-3108

  Weller, Robert A ^a   Reed, Robert A ^a   Warren, Kevin M ^a   Mendenhall, Marcus H ^a   Sierawski, Brian D ^a   Schrimpf, Ronald D ^a   Massengill, Lloyd W ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

Geant; Mathematical modeling; Monte carlo simulation; Radiation transport modeling; Single event effects; Single event modeling; Single event rates

Indexed keywords

MATHEMATICAL MODELING; MONTE CARLO SIMULATION; RADIATION TRANSPORT MODELING; SINGLE EVENT EFFECTS; SINGLE EVENT MODELING; SINGLE-EVENT RATES;

MICROELECTRONICS; MONTE CARLO METHODS; NUCLEAR INSTRUMENTATION; SECONDARY EMISSION; SIMULATORS;

RADIATION EFFECTS;

EID: 72349087294     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2033916     Document Type: Conference Paper

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