메뉴 건너뛰기




Volumn 51, Issue 6 II, 2004, Pages 3669-3678

A screened Coulomb scattering module for displacement damage computations in Geant4

Author keywords

Computational physics; Displacement damage; GaAs; Geant4; Monte Carlo; NIEL; Nonionizing energy loss; Nuclear stopping

Indexed keywords

DATA REDUCTION; ENERGY DISSIPATION; HEAVY IONS; HIGH ENERGY PHYSICS; LIGHT EMITTING DIODES; MONTE CARLO METHODS; RADIATION EFFECTS;

EID: 11044232777     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839643     Document Type: Conference Paper
Times cited : (54)

References (39)
  • 1
    • 0038382314 scopus 로고    scopus 로고
    • Review of displacement damage effects in silicon devices
    • June
    • J. Srour, C. J. Marshall, and P. W. Marshall, "Review of displacement damage effects in silicon devices," IEEE Trans. Nucl. Sci., vol. 50, pp. 653-670, June 2003.
    • (2003) IEEE Trans. Nucl. Sci. , vol.50 , pp. 653-670
    • Srour, J.1    Marshall, C.J.2    Marshall, P.W.3
  • 2
    • 0035720540 scopus 로고    scopus 로고
    • Assessing the impact of the space radiation environment on parametric degradation and single-event transients in optocouplers
    • Dec.
    • R. Reed, C. Poivey, P. Marshall, K. LaBel, C. Marshall, S. Kniffin, J. Barth, and C. Seidleck, "Assessing the impact of the space radiation environment on parametric degradation and single-event transients in optocouplers," IEEE Trans. Nucl. Sci., vol. 48, pp. 2202-2209, Dec. 2001.
    • (2001) IEEE Trans. Nucl. Sci. , vol.48 , pp. 2202-2209
    • Reed, R.1    Poivey, C.2    Marshall, P.3    Label, K.4    Marshall, C.5    Kniffin, S.6    Barth, J.7    Seidleck, C.8
  • 3
    • 0022890049 scopus 로고
    • Energy dependence of proton-induced displacement damage in silicon
    • Dec.
    • E. A. Burke, "Energy dependence of proton-induced displacement damage in silicon," IEEE Trans. Nucl. Sci., vol. NS-33, pp. 1276-1281, Dec. 1986.
    • (1986) IEEE Trans. Nucl. Sci. , vol.NS-33 , pp. 1276-1281
    • Burke, E.A.1
  • 7
    • 0029517909 scopus 로고
    • Energy dependence of lifetime damage constants in GaAs LED's for 1-500 MeV protons
    • Dec.
    • A. Barry, A. Houdayer, P. Hinrichsen, W. Letourneau, and J. Vincent, "Energy dependence of lifetime damage constants in GaAs LED's for 1-500 MeV protons," IEEE Trans. Nucl. Sci., vol. 42, pp. 2104-2107, Dec. 1995.
    • (1995) IEEE Trans. Nucl. Sci. , vol.42 , pp. 2104-2107
    • Barry, A.1    Houdayer, A.2    Hinrichsen, P.3    Letourneau, W.4    Vincent, J.5
  • 9
    • 0035720331 scopus 로고    scopus 로고
    • NIEL and damage correlations for high-energy protons in gallium arsenide devices
    • Dec.
    • S. R. Messenger, R. J. Walters, E. A. Burke, G. P. Summers, and M. A. Xapsos, "NIEL and damage correlations for high-energy protons in gallium arsenide devices," IEEE Trans. Nucl. Sci., vol. 48, pp. 2121-2126, Dec. 2001.
    • (2001) IEEE Trans. Nucl. Sci. , vol.48 , pp. 2121-2126
    • Messenger, S.R.1    Walters, R.J.2    Burke, E.A.3    Summers, G.P.4    Xapsos, M.A.5
  • 11
    • 0028053331 scopus 로고
    • Monte Carlo and other simulation codes for ion-induced radiation effects
    • J. Biersack, "Monte Carlo and other simulation codes for ion-induced radiation effects," Radiation Effects and Defects in Solids, vol. 129, no. 1-2, pp. 15-17, 1994.
    • (1994) Radiation Effects and Defects in Solids , vol.129 , Issue.1-2 , pp. 15-17
    • Biersack, J.1
  • 13
    • 3342936820 scopus 로고
    • Algorithms for the rapid computation of classical cross sections for screened Coulomb collisions
    • M. H. Mendenhall and R. A. Weller, "Algorithms for the rapid computation of classical cross sections for screened Coulomb collisions," in Nucl. Instrum. Methods Phys. Res., Sec. B, vol. 58, 1991, pp. 11-17.
    • (1991) Nucl. Instrum. Methods Phys. Res., Sec. B , vol.58 , pp. 11-17
    • Mendenhall, M.H.1    Weller, R.A.2
  • 15
    • 0000235265 scopus 로고
    • A Monte Carlo computer program for the transport of energetic ions in amorphous targets
    • J. Biersack and L. Haggmark, "A Monte Carlo computer program for the transport of energetic ions in amorphous targets," Nucl. Instrum. Methods, vol. 174, no. 1-2, pp. 257-269, 1980.
    • (1980) Nucl. Instrum. Methods , vol.174 , Issue.1-2 , pp. 257-269
    • Biersack, J.1    Haggmark, L.2
  • 19
    • 0012787849 scopus 로고
    • Elastic Coulomb scattering of heavy ions at intermediate energies
    • C. Aguiar, A. Aleixo, and C. Bertulani, "Elastic Coulomb scattering of heavy ions at intermediate energies," Phys. Rev. C, vol. 42, no. 5, pp. 2180-2186, 1990.
    • (1990) Phys. Rev. C , vol.42 , Issue.5 , pp. 2180-2186
    • Aguiar, C.1    Aleixo, A.2    Bertulani, C.3
  • 20
    • 0028711773 scopus 로고
    • Comparison of Monte Carlo and analytic treatments of displacement damage in Si microvolumes
    • Dec.
    • C. Dale, L. Chen, P. McNulty, P. Marshall, and E. Burke, "Comparison of Monte Carlo and analytic treatments of displacement damage in Si microvolumes," IEEE Trans. Nucl. Sci., vol. 41, pp. 1974-1983, Dec. 1994.
    • (1994) IEEE Trans. Nucl. Sci. , vol.41 , pp. 1974-1983
    • Dale, C.1    Chen, L.2    McNulty, P.3    Marshall, P.4    Burke, E.5
  • 21
    • 4244013889 scopus 로고
    • An algorithm for ab initio computation of small-angle multiple scattering angular distributions
    • M. H. Mendenhall and R. A. Weller, "An algorithm for ab initio computation of small-angle multiple scattering angular distributions," Nucl. Instrum. Methods Phys. Res., Sec. B, vol. 93, no. 1, pp. 5-10, 1994.
    • (1994) Nucl. Instrum. Methods Phys. Res., Sec. B , vol.93 , Issue.1 , pp. 5-10
    • Mendenhall, M.H.1    Weller, R.A.2
  • 23
    • 0035246347 scopus 로고    scopus 로고
    • Effects of secondary particles on the total dose and the displacement damage in space proton environments
    • Feb.
    • I. Jun, "Effects of secondary particles on the total dose and the displacement damage in space proton environments," IEEE Trans. Nucl. Sci., vol. 48, pp. 162-175, Feb. 2001.
    • (2001) IEEE Trans. Nucl. Sci. , vol.48 , pp. 162-175
    • Jun, I.1
  • 24
    • 0034811916 scopus 로고    scopus 로고
    • Updated NIEL calculations for estimating the damage induced by particles and γ-rays in Si and GaAs
    • A. Akkerman, J. Barak, M. Chadwick, J. Levinson, M. Murat, and Y. Lifshitz, "Updated NIEL calculations for estimating the damage induced by particles and γ-rays in Si and GaAs," Rad. Phys. Chem., vol. 62, no. 4, pp. 301-310, 2001.
    • (2001) Rad. Phys. Chem. , vol.62 , Issue.4 , pp. 301-310
    • Akkerman, A.1    Barak, J.2    Chadwick, M.3    Levinson, J.4    Murat, M.5    Lifshitz, Y.6
  • 25
    • 0035723049 scopus 로고    scopus 로고
    • Displacement damage in silicon due to secondary neutrons, pions, deuterons, and alphas from proton interactions with materials
    • Dec.
    • I. Jun and W. McAlpine, "Displacement damage in silicon due to secondary neutrons, pions, deuterons, and alphas from proton interactions with materials," IEEE Trans. Nucl. Sci., vol. 48, pp. 2034-2038, Dec. 2001.
    • (2001) IEEE Trans. Nucl. Sci. , vol.48 , pp. 2034-2038
    • Jun, I.1    McAlpine, W.2
  • 27
    • 0003883182 scopus 로고    scopus 로고
    • MCNPX user's manual: Version 2.1.5
    • Los Alamos National Laboratory
    • L. Waters, "MCNPX User's Manual: Version 2.1.5," Los Alamos National Laboratory, Tech. Rep., 1999.
    • (1999) Tech. Rep.
    • Waters, L.1
  • 29
    • 50849148364 scopus 로고
    • The radial distribution of dose around the path of a heavy ion in liquid water
    • M. P. R. Waligorski, R. N. Hamm, and R. Katz, "The radial distribution of dose around the path of a heavy ion in liquid water," Nucl. Tracks Rad. Meas., vol. 11, pp. 309-319, 1986.
    • (1986) Nucl. Tracks Rad. Meas. , vol.11 , pp. 309-319
    • Waligorski, M.P.R.1    Hamm, R.N.2    Katz, R.3
  • 30
    • 0016598281 scopus 로고
    • A proposed method of calculating displacement dose rates
    • M. Norgett, M. Robinson, and I. Torrens, "A proposed method of calculating displacement dose rates," Nucl. Eng. Des., vol. 33, no. 1, pp. 50-54, 1975.
    • (1975) Nucl. Eng. Des. , vol.33 , Issue.1 , pp. 50-54
    • Norgett, M.1    Robinson, M.2    Torrens, I.3
  • 31
    • 0027844647 scopus 로고
    • Damage correlations in semiconductors exposed to gamma, electron,and proton radiations
    • Dec.
    • G. P. Summers, E. A. Burke, P. Shapiro, S. R. Messenger, and R. J. Walters, "Damage correlations in semiconductors exposed to gamma, electron,and proton radiations," IEEE Trans. Nucl. Sci., vol. 40, pp. 1372-1379, Dec. 1993.
    • (1993) IEEE Trans. Nucl. Sci. , vol.40 , pp. 1372-1379
    • Summers, G.P.1    Burke, E.A.2    Shapiro, P.3    Messenger, S.R.4    Walters, R.J.5
  • 32
    • 0028699689 scopus 로고
    • Implications of angle of incidence in SEU testing of modern circuits
    • Dec.
    • R. Reed, P. McNulty, and W. Abdel-Kader, "Implications of angle of incidence in SEU testing of modern circuits," IEEE Trans. Nucl. Sci., vol. 41, pp. 2049-2054, Dec. 1994.
    • (1994) IEEE Trans. Nucl. Sci. , vol.41 , pp. 2049-2054
    • Reed, R.1    McNulty, P.2    Abdel-Kader, W.3
  • 36
    • 0033207344 scopus 로고    scopus 로고
    • Comparison of radiation damage in silicon induced by proton and neutron irradiation
    • Oct.
    • A. Ruzin, G. Casse, M. Glaser, A. Zanet, F. Lemeilleur, and S. Watts, "Comparison of radiation damage in silicon induced by proton and neutron irradiation," IEEE Trans. Nucl. Sci., vol. 46, pp. 1310-1313, Oct. 1999.
    • (1999) IEEE Trans. Nucl. Sci. , vol.46 , pp. 1310-1313
    • Ruzin, A.1    Casse, G.2    Glaser, M.3    Zanet, A.4    Lemeilleur, F.5    Watts, S.6
  • 37
    • 0015770540 scopus 로고
    • Recombination within disordered regions: Influence of barrier height on recombination rate and injection level effects
    • O. L. Curtis and J. R. Srour, "Recombination within disordered regions: Influence of barrier height on recombination rate and injection level effects," IEEE Trans. Nucl. Sci., vol. NS-20, pp. 196-203, 1973.
    • (1973) IEEE Trans. Nucl. Sci. , vol.NS-20 , pp. 196-203
    • Curtis, O.L.1    Srour, J.R.2
  • 38
    • 0025669255 scopus 로고
    • Proton-induced displacement damage distributions and extremes in silicon microvolumes
    • Dec.
    • P. W. Marshall, C. J. Dale, and E. A. Burke, "Proton-induced displacement damage distributions and extremes in silicon microvolumes," IEEE Trans. Nucl. Sci., vol. 37, pp. 1776-1783, Dec. 1990.
    • (1990) IEEE Trans. Nucl. Sci. , vol.37 , pp. 1776-1783
    • Marshall, P.W.1    Dale, C.J.2    Burke, E.A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.