Single event upset mechanisms for low-energy-deposition events in SiGe HBTs

IEEE Transactions on Nuclear Science

Volumn 55, Issue 3, 2008, Pages 1581-1586

  Montes, Enrique J ^a,b   Reed, Robert A ^a,b   Pellish, Jonathan A ^a,b   Alles, Michael L ^a,b   Schrimpf, Ronald D ^a,b   Weller, Robert A ^a,b   Varadharajaperumal, Muthubalan ^a,c   Niu, Guofu ^a,c   Sutton, Akil K ^a,d   Diestelhorst, Ryan ^a,d   Espinel, Gustavo ^a,d   Krithivasan, Ramkumar ^a,d   Comeau, Jonathan P ^a,d   Cressler, John D ^a,d   Marshall, Paul W ^a,e   Vizkelethy, Gyorgy ^a,f  

^a IEEE

^b VANDERBILT UNIVERSITY   (United States)

^c AUBURN UNIVERSITY   (United States)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^e NASA HEADQUARTERS   (United States)

^f SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Deep trench isolation (DTI); HBT; IBICC; Silicon germanium (SiGe); Single event upset (SEU); TCAD

Indexed keywords

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; GERMANIUM; MECHANISMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ALLOYS;

(P ,P ,T) MEASUREMENTS; ANGLE OF INCIDENCE; CHARGE COLLECTIONS; CHARGE TRANSPORTING; COLLECTOR (FLOTATION); CRITICAL CHARGES; DEEP TRENCH ISOLATION (DTI); HETERO JUNCTION BIPOLAR TRANSISTOR (HBT); LOW ENERGIES; MICRO BEAMS; SIGE HBTS; SILICON GERMANIUM (SI GE); SINGLE EVENT UPSET (SEU); TCAD SIMULATIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 45849125053     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.893920     Document Type: Conference Paper

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