Substrate engineering concepts to mitigate charge collection in deep trench isolation technologies

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3298-3305

  Pellish, Jonathan A ^a,b   Reed, Robert A ^a,b   Schrimpf, Ronald D ^a,b   Alles, Michael L ^a,b   Varadharajaperumal, Muthubalan ^a,d   Niu, Guofu ^a,d   Sutton, Akil K ^a,e   Diestelhorst, Ryan M ^a,e   Espinel, Gustavo ^a,e   Krithivasan, Ramkumar ^a,e   Comeau, Jonathan P ^a,e   Cressler, John D ^a,e   Vizkelethy, Gyorgy ^a,f   Marshall, Paul W ^a,g   Weller, Robert A ^a,b   Mendenhall, Marcus H ^c   Montes, Enrique J ^a,b  

^a IEEE   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d AUBURN UNIVERSITY   (United States)

^e GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^f SANDIA NATIONAL LABORATORIES   (United States)

^g NONE

Author keywords

Deep trench isolation; Ion Beam Induced Charge Collection (IBICC); Silicon germanium; Single Event Upset (SEU); Substrate engineering

Indexed keywords

CHARGE COLLECTION; DEEP TRENCH ISOLATION; MICROBEAM TEST DATA; SILICON GERMANIUM; SINGLE EVENT UPSET (SEU); SUBSTRATE ENGINEERING;

CURRENT DENSITY; ION BEAMS; LAYERED MANUFACTURING; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

GATES (TRANSISTOR);

EID: 33846298827     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.885798     Document Type: Conference Paper

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