Device-orientation effects on multiple-bit upset in 65 nm SRAMs

IEEE Transactions on Nuclear Science

Volumn 55, Issue 6, 2008, Pages 2880-2885

  Tipton, Alan D ^a   Pellish, Jonathan A ^a   Hutson, John M ^a   Baumann, Robert ^b   Deng, Xiaowei ^b   Marshall, Andrew ^b   Xapsos, Michael A ^c   Kim, Hak S ^d   Friendlich, Mark R ^d   Campola, Michael J ^d   Seidleck, Christina M ^d   Label, Ken A ^c   Mendenhall, Marcus H ^e   Reed, Robert A ^a   Schrimpf, Ronald D ^a   Weller, Robert A ^a   Black, Jeff D ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c NASA GODDARD SPACE FLIGHT CENTER   (United States)

^d MEI Technologies   (United States)

^e VANDERBILT UNIVERSITY   (United States)

Author keywords

GEANT4; Heavy ion; MBU; MCU; MRED; Multiple bit upset; SEU; Soft error; SRAM

Indexed keywords

ELECTRIC NETWORK ANALYSIS; HEAVY IONS; MONTE CARLO METHODS; PROBABILITY; STATIC RANDOM ACCESS STORAGE; URANIUM POWDER METALLURGY;

GEANT4; HEAVY ION; MBU; MCU; MRED; MULTIPLE-BIT UPSET; SEU; SOFT ERROR; SRAM;

IONS;

EID: 58849134896     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2006503     Document Type: Conference Paper

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