Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2132-2136

  Olson, Brian D ^a   Ball, Dennis R ^b   Warren, Kevin M ^b   Massengill, Lloyd W ^a   Haddad, Nadim F ^c   Doyle, Scott E ^c   McMorrow, Dale ^d  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c BAE SYSTEMS   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Charge sharing; Parasitic bipolar; Single event upset

Indexed keywords

CHARGE CARRIERS; ELECTRIC CHARGE; NUCLEAR ENGINEERING; TRANSISTORS;

BIPOLAR CONDUCTION; CHARGE SHARING; PARASITIC BIPOLAR; SINGLE EVENT UPSET;

STATIC RANDOM ACCESS STORAGE;

EID: 33144489763     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860684     Document Type: Conference Paper

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