SCOPUS 정보 검색 플랫폼

Volumn 12, Issue 10, 2009, Pages

The effect of precursor ligands on the deposition characteristics of ru films by MOCVD

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION CHARACTERISTICS; MOCVD; RANDOM ORIENTATIONS; RU FILM; RUTHENIUM FILMS; RUTHENOCENES;

ACTIVATION ENERGY; DIFFRACTION; HOLOGRAPHIC INTERFEROMETRY; LIGANDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANOMETALLICS;

RUTHENIUM;

EID: 68949146732 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3191715 Document Type: Article

Times cited : (11)

References (12)

1
- 0942277753
- 0003-6951,. 10.1063/1.1635964
- G. Asano, H. Morioka, H. Funakubo, T. Shibutami, and N. Oshima, Appl. Phys. Lett. 0003-6951, 83, 5506 (2003). 10.1063/1.1635964
- (2003) Appl. Phys. Lett. , vol.83 , pp. 5506
- Asano, G.¹ Morioka, H.² Funakubo, H.³ Shibutami, T.⁴ Oshima, N.⁵

2
- 0034316091
- 0021-4922,. 10.1143/JJAP.39.L1188
- T. Nabatame, M. Hiratani, M. Kadoshima, Y. Shimamoto, Y. Matsui, Y. Ohji, I. Asano, T. Fujiwara, and T. Suzuki, Jpn. J. Appl. Phys., Part 2 0021-4922, 39, L1188 (2000). 10.1143/JJAP.39.L1188
- (2000) Jpn. J. Appl. Phys., Part 2 , vol.39 , pp. 1188
- Nabatame, T.¹ Hiratani, M.² Kadoshima, M.³ Shimamoto, Y.⁴ Matsui, Y.⁵ Ohji, Y.⁶ Asano, I.⁷ Fujiwara, T.⁸ Suzuki, T.⁹

4
- 33646386918
- 0013-4651,. 10.1149/1.2188328
- M. Damayanti, T. Sritharan, Z. H. Gan, S. G. Mhaisalkar, N. Jiang, and L. Chan, J. Electrochem. Soc. 0013-4651, 153, J41 (2006). 10.1149/1.2188328
- (2006) J. Electrochem. Soc. , vol.153 , pp. 41
- Damayanti, M.¹ Sritharan, T.² Gan, Z.H.³ Mhaisalkar, S.G.⁴ Jiang, N.⁵ Chan, L.⁶

5
- 0022162031
- 0013-4651,. 10.1149/1.2113647
- M. L. Green, M. E. Gross, L. E. Papa, K. J. Schnoes, and D. Bransen, J. Electrochem. Soc. 0013-4651, 132, 2677 (1985). 10.1149/1.2113647
- (1985) J. Electrochem. Soc. , vol.132 , pp. 2677
- Green, M.L.¹ Gross, M.E.² Papa, L.E.³ Schnoes, K.J.⁴ Bransen, D.⁵

6
- 0029354515
- 0021-4922,. 10.1143/JJAP.34.4104
- K. Takagi, I. Oizuki, I. Kobayashi, and M. Okada, Jpn. J. Appl. Phys., Part 1 0021-4922, 34, 4104 (1995). 10.1143/JJAP.34.4104
- (1995) Jpn. J. Appl. Phys., Part 1 , vol.34 , pp. 4104
- Takagi, K.¹ Oizuki, I.² Kobayashi, I.³ Okada, M.⁴

8
- 0041414831
- 1099-0062,. 10.1149/1.1592374
- T. Shibutami, K. Kawano, N. Oshima, S. Yokoyama, and H. Funakubo, Electrochem. Solid-State Lett. 1099-0062, 6, C117 (2003). 10.1149/1.1592374
- (2003) Electrochem. Solid-State Lett. , vol.6 , pp. 117
- Shibutami, T.¹ Kawano, K.² Oshima, N.³ Yokoyama, S.⁴ Funakubo, H.⁵

9
- 0002440461
- 0387-0774.
- H. Kadokura, Denshi Zairyo 0387-0774, 39, 18 (2000).
- (2000) Denshi Zairyo , vol.39 , pp. 18
- Kadokura, H.¹

11
- 0038037161
- 0272-9172.
- T. Shibutami, K. Kawano, N. Oshima, S. Yokoyama, and H. Funakubo, Mater. Res. Soc. Symp. Proc. 0272-9172, 748, 111 (2003).
- (2003) Mater. Res. Soc. Symp. Proc. , vol.748 , pp. 111
- Shibutami, T.¹ Kawano, K.² Oshima, N.³ Yokoyama, S.⁴ Funakubo, H.⁵

12
- 0041339833
- 0021-8979,. 10.1063/1.1576513
- S. K. Dey, J. Goswami, A. Das, W. Cao, M. Floyd, and R. Carpenter, J. Appl. Phys. 0021-8979, 94, 774 (2003). 10.1063/1.1576513
- (2003) J. Appl. Phys. , vol.94 , pp. 774
- Dey, S.K.¹ Goswami, J.² Das, A.³ Cao, W.⁴ Floyd, M.⁵ Carpenter, R.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.