Improvement of the morphological stability by stacking RuO2 on Ru thin films with atomic layer deposition

Journal of the Electrochemical Society

Volumn 154, Issue 9, 2007, Pages

  Kwon, Se Hun ^a   Kwon, Oh Kyum ^b   Kim, Jae Hoon ^b   Jeong, Seong Jun ^a   Kim, Sung Wook ^a   Kang, Sang Won ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; AUGER ELECTRON SPECTROSCOPY; OXIDATION; RUTHENIUM COMPOUNDS; SURFACE MORPHOLOGY;

DEPOSITION TEMPERATURE; MORPHOLOGICAL STABILITY; STACKED STRUCTURES; STRESS RELEASE;

THIN FILMS;

EID: 34547516615     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2750448     Document Type: Article

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