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Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 9294-9298

Effect of annealing in oxygen atmosphere on morphological and electrical properties of iridium and ruthenium thin films prepared by liquid delivery MOCVD

(4) Lisker, Marco a Hur'yeva, Tetyana a Ritterhaus, Yves a Burte, Edmund P a

a OTTO VON GUERICKE UNIVERSITY (Germany)

Author keywords

Annealing effect; Field emission microscopy; Iridium; Liquid delivery metalorganic CVD; Ruthenium; X ray diffraction

Indexed keywords

ANNEALING; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC CONDUCTIVITY; IRIDIUM; MORPHOLOGY; PYROLYSIS; RUTHENIUM; THIN FILMS;

METALLIC PHASE; OXIDE PHASE; VAN-DER-PAUW METHOD;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

ANNEALING; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC CONDUCTIVITY; IRIDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PYROLYSIS; RUTHENIUM; THIN FILMS;

EID: 34547671050 PISSN: 02578972 EISSN: None Source Type: Journal
DOI: 10.1016/j.surfcoat.2007.04.078 Document Type: Article

Times cited : (26)

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