Trap assisted conduction in high K dielectric capacitors on 4H-SiC

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 679-682

  Weng, M H ^a   Mahapatra, R ^a   Horsfall, A B ^a   Wright, N G ^a   Coleman, P G ^b   Burrows, C P ^b  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b University of Bath   (United Kingdom)

Author keywords

High K dielectric; MISiC capacitor; Trap assisted conduction

Indexed keywords

INTERFACE STATES; SILICA; SILICON CARBIDE; SILICON OXIDES; TITANIUM DIOXIDE;

CAPACITOR STRUCTURES; CONDUCTION MECHANISM; CONDUCTION MODELING; CURRENT CONDUCTION; ELECTRICAL MEASUREMENT; ELECTRON TRAPPING; TEMPERATURE DEPENDENT; THERMALLY OXIDIZED;

HIGH-K DIELECTRIC;

EID: 37249057061     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.679     Document Type: Conference Paper

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