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Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 8, 2002, Pages 852021-8520210

Divacancy in 3C- and 4H-SiC: An extremely stable defect

(3) Torpo, Leena a Staab, T E M a Nieminen, R M a

a AALTO UNIVERSITY (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DERIVATIVE;

ARTICLE; CRYSTAL STRUCTURE; ELECTRICITY; ENERGY; GEOMETRY; IONIZATION; MOLECULAR STABILITY; PHYSICS;

EID: 1542737531 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (62)

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