Antisite defects in a chemical compound crystal caused by ion irradiation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 258, Issue 1, 2007, Pages 194-198

  Nakagawa, S T ^a   Hashimoto, H ^a   Betz, G ^b  

^a OKAYAMA UNIVERSITY OF SCIENCE   (Japan)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Antisite defect; Crystallography; Defect analysis; Phase transformation

Indexed keywords

CRYSTALLOGRAPHY; ION BOMBARDMENT; MOLECULAR DYNAMICS; PHASE TRANSITIONS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILICON CARBIDE;

ANTISITE DEFECTS; DEFECT ANALYSIS; INTERSTITIAL ATOMS;

CRYSTAL DEFECTS;

EID: 34147165063     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.12.134     Document Type: Article

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