A 600V deep-implanted gate vertical JFET

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1217-1220

  Mizukami, M ^a   Takikawa, O ^a   Murooka, M ^a   Imai, S ^a   Kinoshita, K ^a   Hatakeyama, T ^a   Tsukuda, M ^a   Saito, W ^a   Omura, I ^a   Shinohe, T ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

High voltage; Implantation; JFETs; Low loss; Low on resistance; SiC; Switching

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; MOSFET DEVICES; OPTIMIZATION; SWITCHING;

HIGH VOLTAGE; IMPLANTATION; LOW LOSS; LOW ON RESISTANCE;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 8644253553     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1217     Document Type: Conference Paper

References (3)

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