Electrically active defects in irradiated 4H-SiC

Journal of Applied Physics

Volumn 95, Issue 9, 2004, Pages 4728-4733

  David, M L ^a,b   Alfieri, G ^b   Monakhov, E M ^b   Hallen A ^c   Blanchard, C ^a   Svensson, B G ^b   Barbot, J F ^a  

^a UMR6630   (France)

^b UNIVERSITY OF OSLO   (Norway)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CHARGE CARRIERS; COMPUTER SIMULATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; DISSOCIATION; ELECTRIC FIELD EFFECTS; ENTROPY; ION BEAMS; ION IMPLANTATION; POINT DEFECTS; POLARIZATION; SEMICONDUCTOR DOPING;

ELECTRICALLY ACTIVE DEFECTS; EPITAXIAL LAYERS; FORMATION ENERGY; PROTON IMPLANTATION;

SILICON CARBIDE;

EID: 2442703238     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1689731     Document Type: Article

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