Intrinsic defects in silicon carbide polytypes

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 499-504

  Son, N T ^a   Hai, P N ^a,b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Hanoi University   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; CHARGE TRANSFER; CRYSTAL DEFECTS; ELECTRON IRRADIATION; ELECTRONS; IRRADIATION; MOLECULAR STRUCTURE; PARAMAGNETIC RESONANCE; SILICON;

ANTISITE; INTRINSIC DEFECTS; POSITIVE CHARGE STATE; SILICON POLYTYPES;

SILICON CARBIDE;

EID: 14344279879     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.499     Document Type: Article

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