Ab initio study of the annealing of vacancies and interstitials in cubic SiC: Vacancy-interstitial recombination and aggregation of carbon interstitials

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 23, 2004, Pages

  Bockstedte, Michel ^a   Mattausch, Alexander ^a   Pankratov, Oleg ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; SILICON; SILICON CARBIDE;

AB INITIO CALCULATION; ARTICLE; CHEMICAL REACTION KINETICS; DENSITY FUNCTIONAL THEORY; DIFFUSION; HIGH TEMPERATURE; LOW TEMPERATURE; SEMICONDUCTOR;

EID: 37649031170     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.235202     Document Type: Article

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