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Volumn 601, Issue 13, 2007, Pages 2769-2773

Ordering of Ge nanocrystals using FIB nanolithography

Author keywords

FIB lithography; Growth; MBE; Nanocrystal ordering; Nanostructures; Patterned substrate; SiGe; Unwetting

Indexed keywords

CONTAMINATION; FOCUSED ION BEAMS; MOLECULAR BEAM EPITAXY; NANOLITHOGRAPHY; SEMICONDUCTING GERMANIUM; SILICA;

EID: 34250791154     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.12.075     Document Type: Article
Times cited : (24)

References (13)
  • 10
    • 0031373702 scopus 로고    scopus 로고
    • The hole side walls are oriented with an angle of ∼8 ± 2° with respect to Si(0 0 1) planes. This orientation do not represent a stable planar silicon surface but is formed by Si(0 0 1) terraces and steps
    • The hole side walls are oriented with an angle of ∼8 ± 2° with respect to Si(0 0 1) planes. This orientation do not represent a stable planar silicon surface but is formed by Si(0 0 1) terraces and steps. Baski A.A., Erwin S.C., and Whitman L.J. Surf. Sci. 392 (1997) 69
    • (1997) Surf. Sci. , vol.392 , pp. 69
    • Baski, A.A.1    Erwin, S.C.2    Whitman, L.J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.