Initial Surface Roughening in Ge/Si(001) Heteroepitaxy Driven by Step-Vacancy Line Interaction

Physical Review Letters

Volumn 91, Issue 17, 2003, Pages 1761021-1761024

  Sutter, P ^a   Schick, I ^a   Ernst, W ^a   Sutter, E ^a  

^a Department of Geology and Geological Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; DIMERS; EPITAXIAL GROWTH; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; STATISTICAL METHODS; SURFACE ROUGHNESS;

MORPHOLOGICAL TRANSFORMATIONS; STRAINED-LAYER HETEROEPITAXY;

THIN FILMS;

EID: 0346903408     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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