STM studies of Si(hhm) surfaces with m/h = 1.4-1.5

Surface Science

Volumn 357-358, Issue , 1996, Pages 73-77

  Suzuki, T ^a   Minoda, H ^a   Tanishiro, Y ^a   Yagi, K ^a   Kitada, H ^b   Shimizu, N ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Scanning tunneling microscopy; Silicon; Vicinal single crystal surfaces

Indexed keywords

ELECTRON MICROSCOPY; MODEL STRUCTURES; PHASE SHIFT; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SILICON; SINGLE CRYSTALS; SURFACE STRUCTURE; SURFACES;

PHASE SHIFT OF THE SURFACE PERIOD; REFLECTION ELECTRON MICROSCOPY; SURFACE STRUCTURE MODEL; VICINAL SINGLE CRYSTAL SURFACES;

SURFACE PHENOMENA;

EID: 4243688972     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00061-1     Document Type: Article

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