In situ scanning tunnelling microscopy investigations of Si epitaxial growth on pit-patterned Si (001) substrates

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 293-296

  Sanduijav, B ^a   Matei, D ^a   Chen, G ^a   Schaffler F ^a   Bauer, G ^a   Springholz, G ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

Nanostructures; Scanning tunneling Microscopy; Si molecular beam epitaxy

Indexed keywords

ANNEALING; CRYSTAL GROWTH; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; EPITAXIAL GROWTH; ETCHING; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SCANNING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES; TUNNELING (EXCAVATION);

CYLINDRICAL SHAPES; GROWTH CONDITIONS; HIGH-RESOLUTION; IN SITU SCANNING; REACTIVE IONS; SI EPITAXIAL GROWTHS; SI LAYERS; SI MOLECULAR BEAM EPITAXY; SI(001) SUBSTRATE; STM IMAGES; VERTICAL SIDE WALLS;

REACTIVE ION ETCHING;

EID: 54849428501     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.120     Document Type: Article

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