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Materials Science and Engineering: B

Volumn 120, Issue 1-3, 2005, Pages 68-71

Electric characterization of HfO2 thin films prepared by chemical solution deposition

(2) Guo, H Y a Ye, Z G a

a SIMON FRASER UNIVERSITY (Canada)

Author keywords

C V windows; Electrical properties; HfO2; Thin films

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; HYSTERESIS; LEAKAGE CURRENTS; MOS CAPACITORS; SOLUTIONS; SYNTHESIS (CHEMICAL); THIN FILMS;

CHEMICAL SOLUTION DEPOSITION; CHEMICAL STOICHIOMETRY; CONTROLLING INTERFACES; HFO2;

HAFNIUM COMPOUNDS;

EID: 18944397379 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2005.02.038 Document Type: Conference Paper

Times cited : (6)

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