Correlation between oxide breakdown and defects in SiC wafers

Journal of Electronic Materials

Volumn 27, Issue 10, 1998, Pages 1124-1127

  Soloviev, S ^a   Khlebnikov, I ^a   Madangarli, V ^a   Sudarshan, T S ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

Defects; Metal oxide semiconductor (MOS) capacitor; Oxide breakdown; SiC

Indexed keywords

CAPACITORS; CRYSTAL DEFECTS; ELECTRIC BREAKDOWN; ELECTRIC VARIABLES MEASUREMENT; INCLUSIONS; MOS DEVICES; OXIDES; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE;

GATE OXIDE BREAKDOWN; MOS CAPACITOR;

SILICON WAFERS;

EID: 0032182485     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0149-5     Document Type: Article

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