Analysis of constitution and characteristics of lateral nonuniformity effects of MOS devices using QM-based Terman method

IEEE Transactions on Electron Devices

Volumn 54, Issue 11, 2007, Pages 3064-3070

  Lin, Hao Peng ^a   Hwu, Jenn gwo ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

C V curve; Constant voltage stress (CVS); Dit; Effective oxide charge; Lateral nonuniformity (LNU); MOS; Terman method

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DENSITY (SPECIFIC GRAVITY); DIELECTRIC PROPERTIES; MOS CAPACITORS;

DIELECTRIC LAYER; EFFECTIVE OXIDE CHARGE; INTERFACE TRAP DENSITY; LATERAL NONUNIFORMITY; TERMAN METHOD;

MOS DEVICES;

EID: 36248998880     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.907103     Document Type: Article

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