First-principles study of leakage current through a Si/ SiO2 interface

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 19, 2009, Pages

  Ono, Tomoya ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 67649541327     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.195326     Document Type: Article

References (39)

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