Investigation of local charged defects within high-temperature annealed HfSiONSi O2 gate stacks by scanning capacitance spectroscopy

Journal of Applied Physics

Volumn 101, Issue 8, 2007, Pages

  Naitou, Y ^a,c   Ando, A ^a   Ogiso, H ^a   Kamiyama, S ^b   Nara, Y ^b   Yasutake, K ^c   Watanabe, H ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CRYSTAL DEFECTS; ELECTRON TRAPS; HAFNIUM COMPOUNDS; HIGH TEMPERATURE EFFECTS; SPECTROSCOPIC ANALYSIS;

CHARGED DEFECTS; INTERFACE TRAP CHARGES; SCANNING CAPACITANCE MICROSCOPY; STATIC CAPACITANCE;

GATES (TRANSISTOR);

EID: 34247599405     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2717600     Document Type: Conference Paper

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