Materials theory based modeling of wide band gap semiconductors: from basic properties to devices

Solid-State Electronics

Volumn 44, Issue 2, 2000, Pages 195-204

  Brennan, Kevin F ^a   Bellotti, Enrico ^a   Farahmand, Maziar ^a   Haralson II, Joe ^a   Ruden, P Paul ^b   Albrecht, John D ^b   Sutandi, Agust ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; HETEROJUNCTION BIPOLAR TRANSISTORS; IMPACT IONIZATION; MONTE CARLO METHODS; SEMICONDUCTOR DEVICE MODELS; BAND STRUCTURE; ELECTRIC PROPERTIES; ELECTRON DEVICES; HIGH TEMPERATURE APPLICATIONS; PIEZOELECTRICITY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; THERMOANALYSIS;

CARRIER DRIFT VELOCITIES; GALLIUM NITRIDE; INDIUM NITRIDE; MATERIALS THEORY BASED MODELING METHOD; WIDE BANDGAP SEMICONDUCTORS;

SEMICONDUCTOR MATERIALS; SOLID STATE DEVICES;

EIREV; HIGH POWER ELECTRONIC APPLICATIONS; MATERIALS THEORY; MINORITY CARRIER DIFFUSION; PYROELECTRIC CHARGES;

EID: 0034140342     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00224-5     Document Type: Article

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