Hot-electron transport in 4H-SiC

Applied Physics Letters

Volumn 86, Issue 2, 2005, Pages

  Ardaravicius L ^a   Matulionis, A ^a   Kiprijanovic, O ^a   Liberis, J ^a   Cha, H Y ^b   Eastman, L F ^b   Spencer, M G ^b  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b 425 Philips Hall ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC CONDUCTANCE; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; HIGH TEMPERATURE EFFECTS; OPTIMIZATION; VELOCITY MEASUREMENT;

HIGH-POWER APPLICATIONS; HOT-ELECTRON TRANSPORT; SATURATION VELOCITY; TEMPERATURE SATURATION;

SILICON CARBIDE;

EID: 19744383947     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1851001     Document Type: Article

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