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Electronics Letters

Volumn 44, Issue 11, 2008, Pages 696-698

Effect of fluoride plasma treatment on InAlN/GaN HEMTs

(9) Medjdoub, F a Alomari, M a Carlin, J F b Gonschorek, M b Feltin, E b Py, M A b Gaquiere C c Grandjean, N b Kohn, E a

a UNIVERSITY OF ULM (Germany)

b EPFL (Switzerland)

c INSTITUT D ELECTRONIQUE (France)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; PLASMA APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; VOLTAGE MEASUREMENT;

FLUORIDE PLASMA TREATMENT; GATE THRESHOLD; PINCH-OFF VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 44349119706 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20080864 Document Type: Article

Times cited : (23)

References (7)

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2
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4
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5
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- Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?
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6
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7
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- Medjdoub, F., Alomari, M., Carlin, J.-F., Gonschorek, M., Feltin, E., Py, M.A., Grandjean, N., and Kohn, E.: ' Barrier layer scaling of InAlN/GaN HEMTs ', IEEE Electron Device Lett., 2008, 29, (5), p. 422-425 0741-3106
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.